Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin films

2016 ◽  
Vol 119 (5) ◽  
pp. 055305 ◽  
Author(s):  
D. Magnfält ◽  
A. Fillon ◽  
R. D. Boyd ◽  
U. Helmersson ◽  
K. Sarakinos ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Intrinsic Stress ◽  
Polycrystalline Thin Films ◽  
Dense Refractory

Toward Realizing the Structure-Property Link in Polycrystalline Thin Films

1994 ◽  
Vol 343 ◽  
Author(s):  
C. S. Nichols
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Coincidence Site Lattice ◽  
Polycrystalline Materials ◽  
Structure Property ◽  
New Approach ◽  
Site Lattice ◽  
Polycrystalline Thin Films ◽  
Structures And Properties ◽  
Polycrystalline Form

ABSTRACTMany materials for engineering applications are used in polycrystalline form and contain grain boundaries with a range of structures and properties. However, most research on grain boundaries to date has focussed exclusively on symmetric coincidence site lattice interfaces. To go beyond descriptions for these simple interfaces and thence to an aggregate of grains and grain boundaries in a polycrystal will require a new approach. Here we discuss two models for properties of polycrystalline materials, including their advantages and drawbacks, and indicate the microstructural variables available to optimize properties.

Vertical electrical conduction in pentacene polycrystalline thin films mediated by Au-induced gap states at grain boundaries

2008 ◽  
Vol 95 (1) ◽  
pp. 225-232 ◽  
Author(s):  
Tomoaki Sawabe ◽  
Koshi Okamura ◽  
Tomoki Sueyoshi ◽  
Takashi Miyamoto ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Electrical Conduction ◽  
Polycrystalline Thin Films ◽  
Gap States

On the grain size and coalescence stress resulting from nucleation and growth processes during formation of polycrystalline thin films

1999 ◽  
Vol 14 (7) ◽  
pp. 3164-3168 ◽  
Author(s):  
Carl V. Thompson
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Grain Size ◽  
Film Growth ◽  
Texture Evolution ◽  
Substrate Surface ◽  
Nucleation And Growth ◽  
Intrinsic Stress ◽  
Simple Description ◽  
Polycrystalline Thin Films

When polycrystalline films form by nucleation, growth, impingement, and coalescence of islands on a substrate surface, the grain size at impingement depends on the relative magnitudes of the nucleation rate, the growth rate, and the dimension of the zone from which adatoms diffuse to a growing island. A simple description of the interdependence of these parameters is developed. It is used to discuss the dependence of the grain-size-at-impingement and the intrinsic stress resulting from coalescence on the deposition rate and the substrate temperature, and to discuss how these might affect texture evolution during film growth.

Electron diffraction studies of amorphous and polycrystalline thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 118-119
Author(s):  
D J H Cockayne ◽  
D R McKenzie
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Polycrystalline Materials ◽  
Good Resolution ◽  
Scattered Intensity ◽  
Radial Density ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Nitrogen Ion ◽  
Diffraction Patterns

The study of amorphous and polycrystalline materials by obtaining radial density functions G(r) from X-ray or neutron diffraction patterns is a well-developed technique. We have developed a method for carrying out the same technique using electron diffraction in a standard TEM. It has the advantage that studies can be made of thin films, and on regions of specimen too small for X-ray and neutron studies. As well, it can be used to obtain nearest neighbour distances and coordination numbers from the same region of specimen from which HREM, EDS and EELS data is obtained.The reduction of the scattered intensity I(s) (s = 2sinθ/λ ) to the radial density function, G(r), assumes single and elastic scattering. For good resolution in r, data must be collected to high s. Previous work in this field includes pioneering experiments by Grigson and by Graczyk and Moss. In our work, the electron diffraction pattern from an amorphous or polycrystalline thin film is scanned across the entrance aperture to a PEELS fitted to a conventional TEM, using a ramp applied to the post specimen scan coils. The elastically scattered intensity I(s) is obtained by selecting the elastically scattered electrons with the PEELS, and collecting directly into the MCA. Figure 1 shows examples of I(s) collected from two thin ZrN films, one polycrystalline and one amorphous, prepared by evaporation while under nitrogen ion bombardment.

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