An intrinsic stress scaling law for polycrystalline thin films prepared by ion beam sputtering

1987 ◽  
Vol 62 (5) ◽  
pp. 1800-1807 ◽  
Author(s):  
H. Windischmann
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Scaling Law ◽  
Intrinsic Stress ◽  
Ion Beam Sputtering ◽  
Polycrystalline Thin Films ◽  
Beam Sputtering

Preparation of thin films of (Tb,Dy)Fe2 giant magnetostrictive alloy by ion beam sputtering process.

1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

scholarly journals Fabrication of the Ln-Ba-Cu-O thin films by ion beam sputtering.

Shinku ◽  
1989 ◽  
Vol 32 (3) ◽  
pp. 259-262
Author(s):  
Tetsuro TAJIMA ◽  
Hajime KUWAHARA ◽  
Kohei OTANI ◽  
Tsutom YOTSUYA ◽  
Yoshihiko SUZUKI ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Intrinsic stress and alloying effect in Mo/Ni superlattices: a comparison between ion beam sputtering and thermal evaporation

2005 ◽  
Vol 875 ◽  
Author(s):  
A. Debelle ◽  
G. Abadias ◽  
A. Michel ◽  
C. Jaouen ◽  
Ph. Guérin ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Lattice Parameter ◽  
Growth Stress ◽  
Intrinsic Stress ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Deposited Energy

AbstractEpitaxial Mo(110)/Ni(111) superlattices were grown on (1120) single-crystal sapphiresubstrates, by ion beam sputtering (IBS) and thermal evaporation (TE), in order to investigate the role of deposited energy on the interfacial mixing process observed in Mo sublayers. To separate intermixing and growth stress contributions, a careful and detailed characterization of the stress/strain state of both samples was performed by X-ray Diffraction (XRD). Non-equal biaxial coherency stresses are observed in both samples. For the IBS specimen, an additional source of stress, of hydrostatic type, due to growth-induced point defects, is present, resulting in a triaxial stress state. The use of ion irradiation to achieve a controlled stress relaxation can provide additional data and, as shown elsewhere, allows to obtain the stress-free lattice parameter a0 solely linked to chemical effects. For the TE sample, a standard biaxial analysis gives a0. In both samples, the a0 value is lower than the bulk lattice parameter, due to the presence of intermixed Mo(Ni) layers. However, the intermixing is larger in the sputtered Mo sublayers than in the thermal evaporated ones, putting forward the prime role of energy and/or momentum transfer occurring during energetic bombardment.

Epitaxial growth of MgO thin films on silicon by dual ion beam sputtering

1993 ◽  
Vol 223 (1) ◽  
pp. 11-13 ◽  
Author(s):  
Yijie Li ◽  
Guangcheng Xiong ◽  
Guijun Lian ◽  
Jie Li ◽  
Zizhao Gan
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering
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