Nano-textured high sensitivity ion sensitive field effect transistors

2016 ◽  
Vol 119 (5) ◽  
pp. 054303 ◽  
Author(s):  
M. Hajmirzaheydarali ◽  
M. Sadeghipari ◽  
M. Akbari ◽  
A. Shahsafi ◽  
S. Mohajerzadeh
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Sensitivity

scholarly journals Advances in the fabrication of graphene transistors on flexible substrates

2017 ◽  
Vol 8 ◽  
pp. 467-474 ◽  
Author(s):  
Gabriele Fisichella ◽  
Stella Lo Verso ◽  
Silvestra Di Marco ◽  
Vincenzo Vinciguerra ◽  
Emanuela Schilirò ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
High Sensitivity ◽  
Atomic Layer ◽  
Transparent Electrode ◽  
Large Area ◽  
Sensing Applications ◽  
Dielectric Performance

Graphene is an ideal candidate for next generation applications as a transparent electrode for electronics on plastic due to its flexibility and the conservation of electrical properties upon deformation. More importantly, its field-effect tunable carrier density, high mobility and saturation velocity make it an appealing choice as a channel material for field-effect transistors (FETs) for several potential applications. As an example, properly designed and scaled graphene FETs (Gr-FETs) can be used for flexible high frequency (RF) electronics or for high sensitivity chemical sensors. Miniaturized and flexible Gr-FET sensors would be highly advantageous for current sensors technology for in vivo and in situ applications. In this paper, we report a wafer-scale processing strategy to fabricate arrays of back-gated Gr-FETs on poly(ethylene naphthalate) (PEN) substrates. These devices present a large-area graphene channel fully exposed to the external environment, in order to be suitable for sensing applications, and the channel conductivity is efficiently modulated by a buried gate contact under a thin Al2O3 insulating film. In order to be compatible with the use of the PEN substrate, optimized deposition conditions of the Al2O3 film by plasma-enhanced atomic layer deposition (PE-ALD) at a low temperature (100 °C) have been developed without any relevant degradation of the final dielectric performance.

High sensitivity ultraviolet detection based on three-dimensional graphene field effect transistors decorated with TiO2 NPs

Nanoscale ◽  
2019 ◽  
Vol 11 (31) ◽  
pp. 14912-14920 ◽  
Author(s):  
Shasha Li ◽  
Weijie Yin ◽  
Yuning Li ◽  
Jingye Sun ◽  
Mingqiang Zhu ◽  
...  
Keyword(s):  
Response Time ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Ultraviolet Detection ◽  
Tio2 Nps ◽  
Ultraviolet Photodetectors

Three-dimensional graphene FETs decorated with TiO2 nanoparticles are used as high-sensitivity ultraviolet photodetectors with tunable responsivity and response time.

Exploring the Gas Sensing Performance of Catalytic Metal/Metal Oxide 4H-SiC Field Effect Transistors

2016 ◽  
Vol 858 ◽  
pp. 997-1000 ◽  
Author(s):  
Donatella Puglisi ◽  
Jens Eriksson ◽  
Mike Andersson ◽  
Joni Huotari ◽  
Manuel Bastuck ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
High Sensitivity ◽  
Sensor Response ◽  
Repeated Measurements ◽  
Linear Mode ◽  
Sensor Performance ◽  
Metal Metal

Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene (C6H6) at the low parts per billion (ppb) concentration range. A combination of iridium and tungsten trioxide was used to develop the sensing layer. High sensitivity to 10 ppb C6H6 was demonstrated during several repeated measurements at a constant temperature from 180 to 300 °C. The sensor performance were studied also as a function of the electrical operating point of the device, i.e., linear, onset of saturation, and saturation mode. Measurements performed in saturation mode gave a sensor response up to 52 % higher than those performed in linear mode.

scholarly journals Surface-tailored graphene channels

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Chung Won Lee ◽  
Jun Min Suh ◽  
Seokhoon Choi ◽  
Sang Eon Jun ◽  
Tae Hyung Lee ◽  
...  
Keyword(s):  
Molecular Sieve ◽  
Field Effect ◽  
High Selectivity ◽  
Field Effect Transistors ◽  
Electronic Tongue ◽  
Microfluidic Channel ◽  
High Sensitivity ◽  
High Potential ◽  
Molecular Sensors ◽  
Simultaneous Sensing

AbstractThe detection of ions and molecules in liquids has been receiving considerable attention for the realization of the electronic tongue. Solution-gated field-effect transistors (SFETs) with high sensitivity are useful for detecting ions and molecules by reading electrical transconductance. However, to date, ionic and molecular sensors that employ SFETs have limitations, such as the lack of a dynamic on–off function and low selectivity. In this study, we evaluate rationally designed graphene SFETs as pH and glucose-selective sensors. The integration of the microfluidic channel to the graphene SFET exhibits dynamic on–off functions by controlling injection and withdrawal of solutions. The graphene SFET device exhibits high pH and glucose selectivity when coated with Nafion as a molecular sieve and Au-decorated nanoparticles as receptors, respectively. The dynamic on–off functions and high selectivity of SFETs with tailored graphene channels have a high potential for advancing as a platform for electronic tongues by integrating the separate SFETs as an array for simultaneous sensing of multiple targets.

scholarly journals Amine Detection Using Organic Field Effect Transistor Gas Sensors

Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 13
Author(s):  
Panagiotis Mougkogiannis ◽  
Michael Turner ◽  
Krishna Persaud
Keyword(s):  
Low Power ◽  
Gas Sensors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Limit Of Detection ◽  
High Sensitivity ◽  
Organic Field Effect Transistors ◽  
Practical Applications ◽  
Empirical Prediction ◽  
Sensitivity And Selectivity

Low power gas sensors with high sensitivity and selectivity are desired for many practical applications. Devices based on organic field effect transistors are promising because they can be fabricated at modest cost and are low power devices. Organic field effect transistors fabricated in bottom-gate bottom-contact configuration using the organic semiconductor [2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno] [3,2-b]thiophene) (DPP-T-TT) were systematically investigated to determine the response characteristics to a series of alkylamines and ammonia. The highest sensitivity was to dibutylamine with a limit of detection of 0.025 ppb, followed by n-butylamine, 0.056 ppb, and ammonia, 2.17 ppb. A model was constructed based on the Antoine equation that successfully allows the empirical prediction of the sensitivity and selectivity of the gas sensor to various analytes including amines and alcohols based on the Antoine C parameter and the heat of the vaporization of the analyte.

scholarly journals DEVELOPMENT OF AN ENZYME BIOSENSOR BASED ON pH-SENSITIVE FIELD-EFFECT TRANSISTORS FOR ESTIMATING THE TOTAL CONTENT OF INDOLE ALKALOIDS IN TISSUE CULTURE OF RAUWOLFIA SERPENTINA BENTH. EX KURZ

2021 ◽  
Vol 18 (3) ◽  
pp. 38-50
Author(s):  
V. M. Arkhypova ◽  
О. О. Soldatkin ◽  
L. P. Moghylevska ◽  
І. І. Konvalyuk ◽  
V. А. Kunakh ◽  
...  
Keyword(s):  
Tissue Culture ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Indole Alkaloids ◽  
Total Content ◽  
High Sensitivity ◽  
Ph Sensitive ◽  
Biologically Active ◽  
Rauwolfia Serpentina ◽  
Enzyme Biosensor

A laboratory prototype of an enzyme biosensor based on pH‑sensitive field-effect transistors has been developed to determine the total content of indole alkaloids in Rauwolfia serpentina Benth. Ex Kurz tissue culture. The biosensor was characterized by high sensitivity to th A laboratory prototype of an enzyme biosensor based on pH‑sensitive field effect transistors has been developed to determine the total content of indole alkaloids in Rauwolfia serpentina Benth. Ex Kurz tissue culture. The biosensor was characterized by high sensitivity to the total content of indole alkaloids (minimum limit of determination – 0.5 μg/ml of the total content of indole alkaloids contained in the juice obtained from tissue culture of Rauwolfia serpentina). The linear range of biosensor determination of the analyte was from 2 to 15 μg / ml of the total content of indole alkaloids. Analysis of indole alkaloids using a biosensor is simple and fast and does not require expensive equipment and special sample preparation for analysis, unlike traditional methods. The created biosensor can be further used to control the total content of indole alkaloids in modern biotechnological and pharmaceutical processes for the production of drugs and biologically active additives. e total content of indole alkaloids (minimum limit of determination – 0.5 μg/ml of the total content of indole alkaloids contained in the juice obtained from tissue culture of Rauwolfia serpentina). The linear range of biosensor determination of the analyte was from 2 to 15 μg / ml of the total content of indole alkaloids. Analysis of indole alkaloids using a biosensor is simple and fast and does not require expensive equipment and special sample preparation for analysis, unlike traditional methods. The created biosensor can be further used to control the total content of indole alkaloids in modern biotechnological and pharmaceutical processes for the production of drugs and biologically active additives.  

scholarly journals Detection of C-Reactive Protein by Liquid-Gated Carbon Nanotube Field Effect Transistors (LG-CNTFET): A Promising Tool against Antibiotic Resistance

2021 ◽  
Vol 6 (1) ◽  
pp. 15
Author(s):  
Luis Antonio Panes-Ruiz ◽  
Tom Stückemann ◽  
Leif Riemenschneider ◽  
Markus Löffler ◽  
Viktor Bezugly ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Bacterial Infections ◽  
Field Effect Transistors ◽  
High Sensitivity ◽  
C Reactive Protein ◽  
Reactive Protein ◽  
Promising Tool ◽  
Potential Biomarker ◽  
Tract Infections

Respiratory tract infections have the highest rates of antibiotic prescriptions where symptoms like fever, cough, and rigors are regularly misinterpreted and where bacterial infections cannot be distinguished from viral ones. Nevertheless, it has been recently suggested that C-reactive protein (CRP), a protein produced by the liver in response to infection, could serve as a potential biomarker for the precise differentiation of these two types of infections. Thus, its quick and accurate detection would potentially reduce the unnecessary antibiotic use. To this end, we present an easy and sensitive approach for the selective detection of C-reactive protein (CRP) by liquid-gated carbon nanotube field effect transistors (LG-CNTFET). Herein, CNT-networks were deposited between electrodes via controlled dielectrophoretic deposition and then functionalized with a novel specific antibody and a polyethylene glycol (PEG) layer in order to overcome the Debye screening. The successful fabrication and functionalization were confirmed by scanning electron microscopy. The results showed a selective and reproducible detection down to picomolar concentrations in PBS buffer without complicated microfluidics. The simplicity and high sensitivity of this sensor platform make it a promising tool for the quick and precise differential diagnosis of viral and bacterial infections.

scholarly journals Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Chen Chong ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Haiwu Xie
Keyword(s):  
Power Consumption ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Vertical Direction ◽  
High Sensitivity ◽  
Subthreshold Swing ◽  
Voltage Sensitivity ◽  
Label Free ◽  
Current Sensitivity ◽  
Sensor Field

Label-free biomolecular sensors have been widely studied due to their simple operation. L-shaped tunneling field-effect transistors (LTFETs) are used in biosensors due to their low subthreshold swing, off-state current, and power consumption. In a dielectric-modulated LTFET (DM-LTFET), a cavity is trenched under the gate electrode in the vertical direction and filled with biomolecules to realize the function of the sensor. A 2D simulator was utilized to study the sensitivity of a DM-LTFET sensor. The simulation results show that the current sensitivity of the proposed structure could be as high as 2321, the threshold voltage sensitivity could reach 0.4, and the subthreshold swing sensitivity could reach 0.7. This shows that the DM-LTFET sensor is suitable for a high-sensitivity, low-power-consumption sensor field.

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