scholarly journals Amine Detection Using Organic Field Effect Transistor Gas Sensors

Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 13
Author(s):  
Panagiotis Mougkogiannis ◽  
Michael Turner ◽  
Krishna Persaud
Keyword(s):  
Low Power ◽  
Gas Sensors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Limit Of Detection ◽  
High Sensitivity ◽  
Organic Field Effect Transistors ◽  
Practical Applications ◽  
Empirical Prediction ◽  
Sensitivity And Selectivity

Low power gas sensors with high sensitivity and selectivity are desired for many practical applications. Devices based on organic field effect transistors are promising because they can be fabricated at modest cost and are low power devices. Organic field effect transistors fabricated in bottom-gate bottom-contact configuration using the organic semiconductor [2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno] [3,2-b]thiophene) (DPP-T-TT) were systematically investigated to determine the response characteristics to a series of alkylamines and ammonia. The highest sensitivity was to dibutylamine with a limit of detection of 0.025 ppb, followed by n-butylamine, 0.056 ppb, and ammonia, 2.17 ppb. A model was constructed based on the Antoine equation that successfully allows the empirical prediction of the sensitivity and selectivity of the gas sensor to various analytes including amines and alcohols based on the Antoine C parameter and the heat of the vaporization of the analyte.

scholarly journals Low-power-consumption organic field-effect transistors

2020 ◽  
Vol 3 (1) ◽  
pp. 014009 ◽  
Author(s):  
Yiwei Duan ◽  
Bowen Zhang ◽  
Shizan Zou ◽  
Chuqi Fang ◽  
Qijing Wang ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Power Consumption ◽  
Organic Field Effect Transistors

High-mobility, low-power, and fast-switching organic field-effect transistors with ionic liquids

2008 ◽  
Vol 92 (10) ◽  
pp. 103313 ◽  
Author(s):  
S. Ono ◽  
S. Seki ◽  
R. Hirahara ◽  
Y. Tominari ◽  
J. Takeya
Keyword(s):  
Ionic Liquids ◽  
Low Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Organic Field Effect Transistors ◽  
Fast Switching

High-performance diketopyrrolopyrrole-based organic field-effect transistors for flexible gas sensors

2015 ◽  
Vol 23 ◽  
pp. 76-81 ◽  
Author(s):  
Gi-Seong Ryu ◽  
Kwang Hun Park ◽  
Won-Tae Park ◽  
Yun-Hi Kim ◽  
Yong-Young Noh
Keyword(s):  
Gas Sensors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals Enabling a new method of dynamic field-effect gas sensor operation through lithium-doped tungsten oxide

2019 ◽  
Vol 8 (2) ◽  
pp. 261-267
Author(s):  
Marius Rodner ◽  
Manuel Bastuck ◽  
Andreas Schütze ◽  
Mike Andersson ◽  
Joni Huotari ◽  
...  
Keyword(s):  
Gas Sensors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Relaxation Effect ◽  
Oxide Semiconductor ◽  
Transient Signal ◽  
Gate Bias ◽  
Sensitivity And Selectivity ◽  
Increased Sensitivity ◽  
Novel Method

Abstract. To fulfil today's requirements, gas sensors have to become more and more sensitive and selective. Temperature-cycled operation has long been used to enhance the sensitivity and selectivity of metal-oxide semiconductor gas sensors and, more recently, silicon-carbide-based, gas-sensitive field-effect transistors (SiC-FETs). In this work, we present a novel method to significantly enhance the effect of gate bias on a SiC-FET's response, giving rise to new possibilities for static and transient signal generation and, thus, increased sensitivity and selectivity. A tungsten trioxide (WO3) layer is deposited via pulsed laser deposition as an oxide layer beneath a porous iridium gate, and is doped with 0.1 AT % of lithium cations. Tests with ammonia as a well-characterized model gas show a relaxation effect with a time constant between 20 and 30 s after a gate bias step as well as significantly increased response and sensitivity at +2 V compared to 0 V. We propose an electric field-mediated change in oxygen surface coverage as the cause of this novel effect.

scholarly journals Gradient Copolymerization towards High-performance Monocomponent Polymers for Energy and Charge Storages

2021 ◽  
Author(s):  
Yuanwei Zhu ◽  
Wanlong Lu ◽  
Nan Qiao ◽  
Huize Cui ◽  
Zhipeng Hu ◽  
...  
Keyword(s):  
Energy Density ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Filtration Efficiency ◽  
Nano Composites ◽  
Organic Field Effect Transistors ◽  
Field Effect Mobility ◽  
Nano Composite ◽  
Practical Applications

Abstract Polymers with excellent dielectric and electret capabilities are crucial for energy storage films, organic electronics and environmental filtrations. Nanocomposites is an emerging effective method, but the characteristics of complicated preparation, poor uniformity and high cost restrict its massive and practical applications. Here, we propose a gradient copolymerization strategy with controllable micro-phase interfaces for dielectric capability modulation, and gradient ethylene-styrene copolymer (PESt) exhibits extraordinarily enhanced dielectric, electrical insulating and electret properties against polyethylene and polystyrene. PESt exhibits a dielectric energy density towards 23 J·cm− 3, far exceeding commercially applied polymers and is comparable to nano-composites. By applying PESt as electret layer in organic field-effect transistors, largely enhanced memory window, optimized stability and field-effect mobility over 27 cm2·V− 1·s− 1 are achieved. Finally, PESt electret is employed in environmental filtrations with 20% enhancement in filtration efficiency. The simplicity and processability of gradient copolymerization against nano-composite, further suggest its potential in designing high-performance dielectric/electret polymers.

Gas Sensors Based on Nano/Microstructured Organic Field‐Effect Transistors

Small ◽  
2019 ◽  
Vol 15 (12) ◽  
pp. 1805196 ◽  
Author(s):  
Shiqi Zhang ◽  
Yiwei Zhao ◽  
Xiaowen Du ◽  
Yingli Chu ◽  
Shen Zhang ◽  
...  
Keyword(s):  
Gas Sensors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Low-power organic field-effect transistors and complementary inverter based on low-temperature processed Al2O3 dielectric

2016 ◽  
Vol 34 ◽  
pp. 118-123 ◽  
Author(s):  
Qi-Jun Sun ◽  
Jun Peng ◽  
Wen-Hua Chen ◽  
Xiao-Jian She ◽  
Jie Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors
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