scholarly journals Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Chen Chong ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Haiwu Xie
Keyword(s):  
Power Consumption ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Vertical Direction ◽  
High Sensitivity ◽  
Subthreshold Swing ◽  
Voltage Sensitivity ◽  
Label Free ◽  
Current Sensitivity ◽  
Sensor Field

Label-free biomolecular sensors have been widely studied due to their simple operation. L-shaped tunneling field-effect transistors (LTFETs) are used in biosensors due to their low subthreshold swing, off-state current, and power consumption. In a dielectric-modulated LTFET (DM-LTFET), a cavity is trenched under the gate electrode in the vertical direction and filled with biomolecules to realize the function of the sensor. A 2D simulator was utilized to study the sensitivity of a DM-LTFET sensor. The simulation results show that the current sensitivity of the proposed structure could be as high as 2321, the threshold voltage sensitivity could reach 0.4, and the subthreshold swing sensitivity could reach 0.7. This shows that the DM-LTFET sensor is suitable for a high-sensitivity, low-power-consumption sensor field.

scholarly journals Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing

Sensors ◽  
2019 ◽  
Vol 19 (5) ◽  
pp. 1063 ◽  
Author(s):  
Salvatore Pullano ◽  
Nishat Tasneem ◽  
Ifana Mahbub ◽  
Samira Shamsir ◽  
Marta Greco ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Power Consumption ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Supply Voltage ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Voltage Sensitivity ◽  
Current Sensitivity ◽  
Effect Transistor

Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for biosensor fabrication, studies on electronic interfaces are still scarce (e.g., noise processes, scaling). Therefore, the incorporation of a custom EGFET can lead to biosensors with optimized performance. In this paper, the design and characterization of a transistor association (TA)-based EGFET was investigated. Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature. A DC equivalence with the counterpart involving a single equivalent transistor was observed. Experimental results showed a power consumption of 24.99 mW at 1.2 V supply voltage with a minimum die area of 0.685 × 1.2 mm2. The higher aspect ratio devices required a proportionally increased die area and power consumption. Conversely, the input-referred noise showed an opposite trend with a minimum of 176.4 nVrms over the 0.1 to 10 Hz frequency band for a higher aspect ratio. EGFET as a pH sensor presented further validation of the design with an average voltage sensitivity of 50.3 mV/pH, a maximum current sensitivity of 15.71 mA1/2/pH, a linearity higher than 99.9%, and the possibility of operating at a lower noise level with a compact design and a low complexity.

scholarly journals Scalable Production of High-Sensitivity, Label-Free DNA Biosensors Based on Back-Gated Graphene Field Effect Transistors

ACS Nano ◽  
2016 ◽  
Vol 10 (9) ◽  
pp. 8700-8704 ◽  
Author(s):  
Jinglei Ping ◽  
Ramya Vishnubhotla ◽  
Amey Vrudhula ◽  
A. T. Charlie Johnson
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Sensitivity ◽  
Label Free ◽  
Dna Biosensors ◽  
Free Dna ◽  
Scalable Production

LABEL-FREE BIOMOLECULAR DETECTION USING CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2008 ◽  
Vol 03 (06) ◽  
pp. 415-431 ◽  
Author(s):  
HYE RYUNG BYON ◽  
SUPHIL KIM ◽  
HEE CHEUL CHOI
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Surface Passivation ◽  
Field Effect Transistors ◽  
High Sensitivity ◽  
Detection Methods ◽  
Label Free ◽  
Biomolecular Detection ◽  
Great Opportunity ◽  
High Level

Carbon nanotube field effect transistor (FET) type biosensors have been widely investigated as one of the promising platforms for highly sensitive personalized disease-monitoring electronic devices. Combined with high level cutting edge information technology (IT) infra systems, carbon nanotube transistor biosensors afford a great opportunity to contribute to human disease care by providing early diagnostic capability. Several key prerequisites that should be clarified for the real application include sensitivity, reliability, reproducibility, and expandability to multiplex detection systems. In this brief review, we introduce the types, fabrication, and detection methods of single-walled carbon nanotube FET (SWNT-FET) devices. As surface functionalization of the devices by which nonspecific bindings (NSBs) are efficiently prohibited is also another important issue regarding reliable biosensors, we discuss several key strategies about surface passivation along with examples of various biomolecules such as proteins, DNA, small molecules, aptamers, viruses, and cancer and neurodegenerative disease markers which have been successfully sensed by SWNT-FET devices. Finally, we discuss proposed detection mechanisms, according to which strategies for fabricating sensor devices having high sensitivity are determined. Two main mechanisms — charge transfer (or electrostatic gate effect) and Schottky barrier effect, depending on the place where biomolecules are adsorbed — will be covered.

scholarly journals Capacitive Field-effect (bio-)chemical Sensors Based on Nanocrystalline Diamond Films

2009 ◽  
Vol 1203 ◽  
Author(s):  
Matthias Bäcker ◽  
Arshak Poghossian ◽  
Maryam H. Abouzar ◽  
Sylvia Wenmackers ◽  
Stoffel D. Janssens ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
High Sensitivity ◽  
Ph Sensitive ◽  
Nanocrystalline Diamond ◽  
Penicillin G ◽  
Layer By Layer ◽  
Label Free ◽  
High Coverage ◽  
Layer Adsorption

AbstractCapacitive field-effect electrolyte-diamond-insulator-semiconductor (EDIS) structures with O-terminated nanocrystalline diamond (NCD) as sensitive gate material have been realized and investigated for the detection of pH, penicillin concentration, and layer-by-layer adsorption of polyelectrolytes. The surface oxidizing procedure of NCD thin films as well as the seeding and NCD growth process on a Si-SiO2 substrate have been improved to provide high pH-sensitive, non-porous thin films without damage of the underlying SiO2 layer and with a high coverage of O-terminated sites. The NCD surface topography, roughness, and coverage of the surface groups have been characterized by SEM, AFM and XPS methods. The EDIS sensors with O-terminated NCD film treated in oxidizing boiling mixture for 45 min show a pH sensitivity of about 50 mV/pH. The pH-sensitive properties of the NCD have been used to develop an EDIS-based penicillin biosensor with high sensitivity (65-70 mV/decade in the concentration range of 0.25-2.5 mM penicillin G) and low detection limit (5 μM). The results of label-free electrical detection of layer-by-layer adsorption of charged polyelectrolytes are presented, too.

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit

2018 ◽  
Vol 30 (28) ◽  
pp. 1800932 ◽  
Author(s):  
Xingqiang Liu ◽  
Renrong Liang ◽  
Guoyun Gao ◽  
Caofeng Pan ◽  
Chunsheng Jiang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Subthreshold Swing ◽  
Negative Capacitance

scholarly journals Low-power-consumption organic field-effect transistors

2020 ◽  
Vol 3 (1) ◽  
pp. 014009 ◽  
Author(s):  
Yiwei Duan ◽  
Bowen Zhang ◽  
Shizan Zou ◽  
Chuqi Fang ◽  
Qijing Wang ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Power Consumption ◽  
Organic Field Effect Transistors
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