Control of VO•• ∼  TiTi′ dipole pairs as well as MgTi″ defects on dielectric properties of Mg doped (Pb0.35Sr0.65)TiO3 thin film

2016 ◽  
Vol 119 (1) ◽  
pp. 014103 ◽  
Author(s):  
Tao Hu ◽  
Zongrong Wang ◽  
Ning Ma ◽  
Piyi Du
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Tio3 Thin Film ◽  
Mg Doped

Structure and Dielectric Properties of Mg, Cr-Doped LaSrFeO3 Films

2014 ◽  
Vol 538 ◽  
pp. 11-14
Author(s):  
Yang Lu Hou ◽  
Xing Hua Fu ◽  
Wen Hong Tao ◽  
Xin Jin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Doping Amount ◽  
Single Perovskite Phase ◽  
Pure Perovskite Phase ◽  
Mg Doped

Mg-doped LaFeO3 thin film and Mg, Cr-doped La0.5Sr0.5FeO3 thin films were prepared by the sol-gel method. The change rules of structure and dielectric properties of the films were studied by XRD, SEM, and Agilent. The dielectric properties of La0.5Sr0.5FeO3 and LaFeO3 films were improved by the substitute with Mg and Cr. The doping amount of Mg and Cr for the optimal dielectric properties of La0.5Sr0.5FeO3 films is 45mol%, 25mol%, respectively, and for LaFeO3, the doping amount of Mg is 8mol%. The observed pure perovskite phase of the doped films suggested the dissolution of Mn, Co, and Ni in La0.5Sr0.5FeO3 crystal lattice. Mg and Cr were integrate in the lattice of LaFeO3 and La0.5Sr0.5FeO3, and mineral is single perovskite phase. The surface of the film is smooth, without cracks, surface grain size distribution and had uniform grain size.

Preparation and dielectric properties of compositionally graded (Ba,Sr)TiO3 thin film by sol-gel technique

2006 ◽  
Vol 16 ◽  
pp. s119-s122 ◽  
Author(s):  
Tian-jin ZHANG ◽  
Jun WANG ◽  
Bai-shun ZHANG ◽  
Jin-zhao WANG ◽  
Neng WAN ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Tio3 Thin Film ◽  
Gel Technique

Substrate-induced mechanical and dielectric properties of a ferroelectric thin film

2002 ◽  
Vol 91 (8) ◽  
pp. 4973-4982 ◽  
Author(s):  
L. Lahoche ◽  
V. Lorman ◽  
S. B. Rochal ◽  
J. M. Roelandt
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Ferroelectric Thin Film

Combinatorial (Ba,Sr)TiO3 thin film growth: X-ray diffraction and Raman spectroscopy

2009 ◽  
Vol 106 (3) ◽  
pp. 034108 ◽  
Author(s):  
H. Bouyanfif ◽  
J. Wolfman ◽  
M. El Marssi ◽  
Y. Yuzyuk ◽  
R. Bodeux ◽  
...  
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Tio3 Thin Film ◽  
X Ray Diffraction ◽  
X Ray

Influence of Ru Dopant on the Dielectric Properties of Zr-doped HfO2 High-k Thin Film

2019 ◽  
Vol 6 (1) ◽  
pp. 121-127 ◽  
Author(s):  
Chen-Han Lin ◽  
Yue Kuo ◽  
Jiang Lu
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
High K

scholarly journals Tunable high-κ ZrxAl1−xOy thin film dielectrics from all-inorganic aqueous precursor solutions

RSC Advances ◽  
2017 ◽  
Vol 7 (62) ◽  
pp. 39147-39152 ◽  
Author(s):  
K. N. Woods ◽  
E. C. Waddington ◽  
C. A. Crump ◽  
E. A. Bryan ◽  
T. S. Gleckler ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Dielectric Properties ◽  
Aluminum Oxide ◽  
Oxide Thin Film ◽  
Solution Route ◽  
Thin Film Dielectrics ◽  
Film Dielectric ◽  
Inorganic Aqueous Solution

An all-inorganic, aqueous solution route enables facile control of composition and optimization of zirconium aluminum oxide thin film dielectric properties.

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

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