Substrate-induced mechanical and dielectric properties of a ferroelectric thin film

2002 ◽  
Vol 91 (8) ◽  
pp. 4973-4982 ◽  
Author(s):  
L. Lahoche ◽  
V. Lorman ◽  
S. B. Rochal ◽  
J. M. Roelandt
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Ferroelectric Thin Film

Dielectric properties of BaTiO3∕SrTiO3 ferroelectric thin film artificial lattice

2006 ◽  
Vol 100 (5) ◽  
pp. 051613 ◽  
Author(s):  
Jaichan Lee ◽  
Leejun Kim ◽  
Juho Kim ◽  
Donggeun Jung ◽  
Umesh V. Waghmare
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Ferroelectric Thin Film

The effects of PBB on the dielectric properties of BST film

2005 ◽  
Vol 902 ◽  
Author(s):  
Jin Cheol Kim ◽  
Jun Rok Oh
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Metal Oxide ◽  
Current Density ◽  
Energy Dispersive Spectrometer ◽  
Ferroelectric Thin Film ◽  
Rf Magnetron Sputtering

AbstractThe mixture of PbO-Bi2O3-B2O3 (PBB) were formed on the Ba0.5Sr0.5TiO3 (BST) film and the effects of PBB phase on the dielectric properties of the BST film were investigated. The amorphous PBB layer was deposited on the BST film using rf magnetron sputtering and diffused into the film by heat treatment. The PBB phase in BST film was identified by energy dispersive spectrometer (EDS). Dielectric properties of BST film were significantly improved after the diffusion of PBB. The leakage current density of BST film decreased from 3.24×10-5 A/cm2 to 9.45×10-8 A/cm2 at 1.5 V and the dielectric constant increased from 238 to 533. These results show that the diffusion of insulating metal oxide into the ferroelectric thin film can improve the dielectric properties of the film.

A Study on the Growth of a Ferroelectric Thin Film Using Ionized Cluster Beam Epitaxy Technique and the Application for Ulsi Fabrication

1996 ◽  
Vol 441 ◽  
Author(s):  
Hyun Seok Lee ◽  
Man Young Sung
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Electron Beam ◽  
Dielectric Properties ◽  
Substrate Temperature ◽  
Ferroelectric Thin Film ◽  
Process Conditions ◽  
Cluster Beam ◽  
Bst Films ◽  
Ulsi Fabrication

AbstractThe dielectric properties of Ba0.65Sr0.35TiO3(BST) films deposited by an electron beam assisted ionized cluster beam epitaxy (ICBE) technique were investigated. Highly (110) oriented BST films having a thickness up to 1, um have been successfully grown on a Si (100) substrate at 400°C using the electron beam assisted ICBE system with a plasma O2 source. It was found that the dielectric constant increases from 475 to 1191 with different process conditions. A BST film with a thickness of 500Å deposited at a substrate temperature of 400°C has a dielectric constant of 1191 and a leakage current of about 2.37×10-9 A/cm2. This shows the BST film can be applied to dielectrics of ULSI capacitors.

Dielectric properties and spectroscopy of large-aspect-ratio ferroelectric thin-film heterostructures

2012 ◽  
Vol 45 (33) ◽  
pp. 335401 ◽  
Author(s):  
Manoj Narayanan ◽  
Uthamalingam Balachandran ◽  
Stanislav Stoupin ◽  
Beihai Ma ◽  
Sheng Tong ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Aspect Ratio ◽  
Ferroelectric Thin Film ◽  
Large Aspect Ratio

Effect of Forming Gas on Properties of SrBi2Ta2O9 Ferroelectric Thin Film and Powder

2009 ◽  
Vol 24 (4) ◽  
pp. 737-740 ◽  
Author(s):  
Dong-Sheng WANG ◽  
Tao YU ◽  
An HU ◽  
Di WU ◽  
Ai-Dong LI ◽  
...  
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film

Modeling the influence of the seeding layer on the transition behavior of a ferroelectric thin film

2011 ◽  
Vol 520 (1) ◽  
pp. 646-650 ◽  
Author(s):  
A. Oubelkacem ◽  
I. Essaoudi ◽  
A. Ainane ◽  
M. Saber ◽  
F. Dujardin
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Seeding Layer ◽  
Transition Behavior
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