The understanding on the evolution of stress-induced gate leakage in high-k dielectric metal-oxide-field-effect transistor by random-telegraph-noise measurement

E. R. Hsieh; Steve S. Chung

doi:10.1063/1.4938142

The understanding on the evolution of stress-induced gate leakage in high-k dielectric metal-oxide-field-effect transistor by random-telegraph-noise measurement

Applied Physics Letters ◽

10.1063/1.4938142 ◽

2015 ◽

Vol 107 (24) ◽

pp. 243506 ◽

Cited By ~ 3

Author(s):

E. R. Hsieh ◽

Steve S. Chung

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Noise Measurement ◽

Gate Leakage ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

Effect Transistor ◽

High K Dielectric

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Experimental Evidence for Involvement of Interface States in Random Telegraph Noise in Junction Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.104101 ◽

2012 ◽

Vol 51 (10R) ◽

pp. 104101

Author(s):

Yuki Mori ◽

Akio Shima ◽

Kenichi Takeda ◽

Ren-ichi Yamada

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Effect Transistor

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Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

Solid-State Electronics ◽

10.1016/j.sse.2009.12.033 ◽

2010 ◽

Vol 54 (4) ◽

pp. 362-367 ◽

Cited By ~ 18

Author(s):

Heung-Jae Cho ◽

Sanghoon Lee ◽

Byung-Gook Park ◽

Hyungcheol Shin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Random Telegraph Noise ◽

Trap Energy ◽

Telegraph Noise ◽

Effect Transistor

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Experimental Evidence for Involvement of Interface States in Random Telegraph Noise in Junction Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.104101 ◽

2012 ◽

Vol 51 ◽

pp. 104101

Author(s):

Yuki Mori ◽

Akio Shima ◽

Kenichi Takeda ◽

Ren-ichi Yamada

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Effect Transistor

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Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.4721658 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104513 ◽

Cited By ~ 15

Author(s):

Yuki Mori ◽

Hiroyuki Yoshimoto ◽

Kenichi Takeda ◽

Ren-ichi Yamada

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Effect Transistor

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Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1598 ◽

2004 ◽

Vol 43 (No. 12B) ◽

pp. L1598-L1600 ◽

Cited By ~ 2

Author(s):

Takuji Hosoi ◽

Yoshinari Kamakura ◽

Kenji Taniguchi

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Effect Transistor ◽

Soft Breakdown

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Gate leakage reduction through the use of a gate-to-source/drain non-overlapped metal–oxide–semiconductor field-effect transistor structure

Proceedings of the Institution of Mechanical Engineers Part N Journal of Nanoengineering and Nanosystems ◽

10.1177/1740349911404304 ◽

2010 ◽

Vol 224 (4) ◽

pp. 173-181 ◽

Cited By ~ 1

Author(s):

A K Rana ◽

N Chand ◽

V Kapoor

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage ◽

Transistor Structure ◽

Leakage Reduction ◽

Effect Transistor

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Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521479 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AA05 ◽

Cited By ~ 1

Author(s):

G. Roll ◽

S. Jakschik ◽

M. Goldbach ◽

A. Wachowiak ◽

T. Mikolajick ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Defects ◽

High K ◽

Effect Transistor

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Characterization of a sol-gel based high-k dielectric field effect transistor for cryogenic operation

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3006019 ◽

2008 ◽

Vol 26 (6) ◽

pp. 1887-1891 ◽

Cited By ~ 7

Author(s):

M. Ziaur Rahman Khan ◽

D. G. Hasko ◽

M. S. M. Saifullah ◽

M. E. Welland

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Sol Gel ◽

High K ◽

Effect Transistor ◽

High K Dielectric

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Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3578466 ◽

2011 ◽

Vol 29 (3) ◽

pp. 032203 ◽

Cited By ~ 1

Author(s):

Shu-Tong Chang ◽

Chang-Chun Lee ◽

P.-H. Sun

Keyword(s):

Computer Aided Design ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

High K ◽

Effect Transistor ◽

High K Dielectric ◽

Aided Design

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Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSix/HfO2Gate Stack by Interfacial Layer Formation Using Ozone–Water-Last Treatment

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2379 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2379-2382 ◽

Cited By ~ 4

Author(s):

Itaru Oshiyama ◽

Kaori Tai ◽

Tomoyuki Hirano ◽

Shinpei Yamaguchi ◽

Kazuaki Tanaka ◽

...

Keyword(s):

Metal Oxide ◽

Interfacial Layer ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Formation ◽

Gate Leakage ◽

Leakage Reduction ◽

Effect Transistor

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