Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor

Yuki Mori; Hiroyuki Yoshimoto; Kenichi Takeda; Ren-ichi Yamada

doi:10.1063/1.4721658

Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.4721658 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104513 ◽

Cited By ~ 15

Author(s):

Yuki Mori ◽

Hiroyuki Yoshimoto ◽

Kenichi Takeda ◽

Ren-ichi Yamada

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Effect Transistor

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Experimental Evidence for Involvement of Interface States in Random Telegraph Noise in Junction Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.104101 ◽

2012 ◽

Vol 51 (10R) ◽

pp. 104101

Author(s):

Yuki Mori ◽

Akio Shima ◽

Kenichi Takeda ◽

Ren-ichi Yamada

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Effect Transistor

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Experimental Evidence for Involvement of Interface States in Random Telegraph Noise in Junction Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.104101 ◽

2012 ◽

Vol 51 ◽

pp. 104101

Author(s):

Yuki Mori ◽

Akio Shima ◽

Kenichi Takeda ◽

Ren-ichi Yamada

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Effect Transistor

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Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

Solid-State Electronics ◽

10.1016/j.sse.2009.12.033 ◽

2010 ◽

Vol 54 (4) ◽

pp. 362-367 ◽

Cited By ~ 18

Author(s):

Heung-Jae Cho ◽

Sanghoon Lee ◽

Byung-Gook Park ◽

Hyungcheol Shin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Random Telegraph Noise ◽

Trap Energy ◽

Telegraph Noise ◽

Effect Transistor

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Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1598 ◽

2004 ◽

Vol 43 (No. 12B) ◽

pp. L1598-L1600 ◽

Cited By ~ 2

Author(s):

Takuji Hosoi ◽

Yoshinari Kamakura ◽

Kenji Taniguchi

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Effect Transistor ◽

Soft Breakdown

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Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521479 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AA05 ◽

Cited By ~ 1

Author(s):

G. Roll ◽

S. Jakschik ◽

M. Goldbach ◽

A. Wachowiak ◽

T. Mikolajick ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Defects ◽

High K ◽

Effect Transistor

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Improvement of drain leakage current characteristics in metal-oxide-semiconductor-field-effect-transistor by asymmetric source-drain structure

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218598 ◽

2012 ◽

Cited By ~ 1

Author(s):

Byoungseon Choi ◽

Hyunae Park ◽

Dongsoo Kim ◽

Byoungdeog Choi

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Current Characteristics

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Impact of interface traps on gate-induced drain leakage current inn-type metal oxide semiconductor field effect transistor

International Journal of Electronics ◽

10.1080/00207210500092677 ◽

2005 ◽

Vol 92 (9) ◽

pp. 539-552 ◽

Cited By ~ 4

Author(s):

A. Touhami * ◽

A. Bouhdada

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Effect Transistor

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The n-type metal oxide semiconductor field-effect transistor bias impact on the modelling of the gate-induced drain leakage current

Semiconductor Science and Technology ◽

10.1088/0268-1242/17/12/311 ◽

2002 ◽

Vol 17 (12) ◽

pp. 1272-1277 ◽

Cited By ~ 1

Author(s):

A Touhami ◽

A Bouhdada

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3292204 ◽

2010 ◽

Vol 96 (4) ◽

pp. 043502 ◽

Cited By ~ 9

Author(s):

Ju-Wan Lee ◽

Hyungcheol Shin ◽

Jong-Ho Lee

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

P Type

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Modeling of gate-induced drain leakage current in n-type metal–oxide–semiconductor field effect transistor

Journal of Applied Physics ◽

10.1063/1.1327607 ◽

2001 ◽

Vol 89 (3) ◽

pp. 1880 ◽

Cited By ~ 7

Author(s):

A. Touhami ◽

A. Bouhdada

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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