Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor

2011 ◽  
Vol 29 (1) ◽  
pp. 01AA05 ◽  
Author(s):  
G. Roll ◽  
S. Jakschik ◽  
M. Goldbach ◽  
A. Wachowiak ◽  
T. Mikolajick ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Defects ◽  
High K ◽  
Effect Transistor

Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal–oxide–semiconductor field effect transistor

2004 ◽  
Vol 85 (7) ◽  
pp. 1286-1288 ◽  
Author(s):  
Se Jong Rhee ◽  
Chang Yong Kang ◽  
Chang Seok Kang ◽  
Rino Choi ◽  
Chang Hwan Choi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
Effect Transistor
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