scholarly journals Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: Theory versus experiment

2015 ◽  
Vol 118 (24) ◽  
pp. 244501 ◽  
Author(s):  
Francisco Pasadas ◽  
David Jiménez
Keyword(s):  
Radio Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Bilayer Graphene ◽  
Large Signal ◽  
Signal Model ◽  
Graphene Field Effect Transistor ◽  
Theory Versus ◽  
Effect Transistor

A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

2017 ◽  
Vol 64 (10) ◽  
pp. 4302-4309 ◽  
Author(s):  
Jorge-Daniel Aguirre-Morales ◽  
Sebastien Fregonese ◽  
Chhandak Mukherjee ◽  
Wei Wei ◽  
Henri Happy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Compact Model ◽  
Monolayer Graphene ◽  
Large Signal ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Rf Circuit

scholarly journals Monolayer and bilayer graphene field effect transistor using Verilog-A

2021 ◽  
Vol 10 (1) ◽  
pp. 56
Author(s):  
Nayana G. H. ◽  
Vimala P.
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Transport Model ◽  
Bilayer Graphene ◽  
Performance Parameters ◽  
Component Structure ◽  
Graphene Field Effect Transistor ◽  
Optimized Model ◽  
Evaluation Of Parameters ◽  
Effect Transistor

Monolayer and bilayer graphene field effect transistor modeling is presented in this paper. The transport model incorporated, works well for both drift diffusive and ballistic conditions. The validity of the model was checked for various device dimensions and bias voltages. Performance parameters affecting operation of graphene field effect transistor in various region of operation are optimized. Model was developed to verify transfer characteristics for monolayer and bilayer graphene field effect transistor. Results obtained prove the ambipolar property in Graphene. MATLAB is used for numerical modeling for systematic performance evaluation of parameters in graphene. The tool used to simulate the characteristics is cadence Verilog-A which describe analog component structure.

Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications

2014 ◽  
Vol 25 (34) ◽  
pp. 345203 ◽  
Author(s):  
Amirhasan Nourbakhsh ◽  
Tarun K Agarwal ◽  
Alexander Klekachev ◽  
Inge Asselberghs ◽  
Mirco Cantoro ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Bilayer Graphene ◽  
Double Gate ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

A Surface Potential-Based Model for Dual Gate Bilayer Graphene Field Effect Transistor Including the Capacitive Effects

2019 ◽  
Vol 28 (14) ◽  
pp. 1950241
Author(s):  
Sudipta Bardhan ◽  
Manodipan Sahoo ◽  
Hafizur Rahaman
Keyword(s):  
Surface Potential ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Bilayer Graphene ◽  
Design Environment ◽  
Surface Potentials ◽  
Graphene Field Effect Transistor ◽  
Dual Gate ◽  
Effect Transistor

In this work, a surface potential modeling approach has been proposed to model dual gate, bilayer graphene field effect transistor. The equivalent capacitive network of GFET has been improved considering the quantum capacitance effect for each layer and interlayer capacitances. Surface potentials of both layers are determined analytically from equivalent capacitive network. The explicit expression of drain to source current is established from drift-diffusion transport mechanism using the surface potentials of the layers. The drain current characteristics and transfer characteristics of the developed model shows good agreement with the experimental results in literatures. The small signal parameters of intrinsic graphene transistor i.e., output conductance ([Formula: see text]), transconductance ([Formula: see text]), gate to drain capacitance ([Formula: see text]) and gate to source capacitance ([Formula: see text]) have been derived and finally, the cut-off frequency is determined for the developed model. The model is compared with reported experimental data using Normalized Root Mean Square Error (NRMSE) metric and it shows less than [Formula: see text] NRMSE. A Verilog-A code has been developed for this model and a single ended frequency doubler has been designed in Cadence Design environment using this Verilog-A model.

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