Device characteristics and tight binding based modeling of bilayer graphene field-effect transistor

2013 ◽  
Vol 13 (6) ◽  
pp. 1082-1089 ◽  
Author(s):  
N. Ghobadi ◽  
Y. Abdi
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Tight Binding ◽  
Bilayer Graphene ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

scholarly journals Monolayer and bilayer graphene field effect transistor using Verilog-A

2021 ◽  
Vol 10 (1) ◽  
pp. 56
Author(s):  
Nayana G. H. ◽  
Vimala P.
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Transport Model ◽  
Bilayer Graphene ◽  
Performance Parameters ◽  
Component Structure ◽  
Graphene Field Effect Transistor ◽  
Optimized Model ◽  
Evaluation Of Parameters ◽  
Effect Transistor

Monolayer and bilayer graphene field effect transistor modeling is presented in this paper. The transport model incorporated, works well for both drift diffusive and ballistic conditions. The validity of the model was checked for various device dimensions and bias voltages. Performance parameters affecting operation of graphene field effect transistor in various region of operation are optimized. Model was developed to verify transfer characteristics for monolayer and bilayer graphene field effect transistor. Results obtained prove the ambipolar property in Graphene. MATLAB is used for numerical modeling for systematic performance evaluation of parameters in graphene. The tool used to simulate the characteristics is cadence Verilog-A which describe analog component structure.

Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications

2014 ◽  
Vol 25 (34) ◽  
pp. 345203 ◽  
Author(s):  
Amirhasan Nourbakhsh ◽  
Tarun K Agarwal ◽  
Alexander Klekachev ◽  
Inge Asselberghs ◽  
Mirco Cantoro ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Bilayer Graphene ◽  
Double Gate ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

A Surface Potential-Based Model for Dual Gate Bilayer Graphene Field Effect Transistor Including the Capacitive Effects

2019 ◽  
Vol 28 (14) ◽  
pp. 1950241
Author(s):  
Sudipta Bardhan ◽  
Manodipan Sahoo ◽  
Hafizur Rahaman
Keyword(s):  
Surface Potential ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Bilayer Graphene ◽  
Design Environment ◽  
Surface Potentials ◽  
Graphene Field Effect Transistor ◽  
Dual Gate ◽  
Effect Transistor

In this work, a surface potential modeling approach has been proposed to model dual gate, bilayer graphene field effect transistor. The equivalent capacitive network of GFET has been improved considering the quantum capacitance effect for each layer and interlayer capacitances. Surface potentials of both layers are determined analytically from equivalent capacitive network. The explicit expression of drain to source current is established from drift-diffusion transport mechanism using the surface potentials of the layers. The drain current characteristics and transfer characteristics of the developed model shows good agreement with the experimental results in literatures. The small signal parameters of intrinsic graphene transistor i.e., output conductance ([Formula: see text]), transconductance ([Formula: see text]), gate to drain capacitance ([Formula: see text]) and gate to source capacitance ([Formula: see text]) have been derived and finally, the cut-off frequency is determined for the developed model. The model is compared with reported experimental data using Normalized Root Mean Square Error (NRMSE) metric and it shows less than [Formula: see text] NRMSE. A Verilog-A code has been developed for this model and a single ended frequency doubler has been designed in Cadence Design environment using this Verilog-A model.

scholarly journals High I on/I off current ratio graphene field effect transistor: the role of line defect

2015 ◽  
Vol 6 ◽  
pp. 2062-2068 ◽  
Author(s):  
Mohammad Hadi Tajarrod ◽  
Hassan Rasooli Saghai
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Tight Binding ◽  
Topological Defects ◽  
Atomic Scale ◽  
Line Defect ◽  
Digital Devices ◽  
Graphene Field Effect Transistor ◽  
Perfect Graphene ◽  
Effect Transistor

The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5–8–5 sp2-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-binding Hamiltonian frameworks. AGNRFET basic terms such as the on/off current, transconductance and subthreshold swing were investigated along with the extended line defect (ELD). The results indicated that the presence of ELDs had a significant effect on the parameters of the GNRFET. Compared to conventional transistors, the increase of the I on/I off ratio in graphene transistors with ELDs enhances their applicability in digital devices.

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