Radio-frequency small-signal model of hetero-gate-dielectric p-n-p-n tunneling field-effect transistor including charge conservation capacitance and substrate parameters

2015 ◽  
Vol 118 (9) ◽  
pp. 095708 ◽  
Author(s):  
Saeid Marjani ◽  
Seyed Ebrahim Hosseini
Keyword(s):  
Radio Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Small Signal ◽  
Signal Model ◽  
Charge Conservation ◽  
Small Signal Model ◽  
Effect Transistor

Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor

2020 ◽  
Vol 2 (3) ◽  
pp. 035004
Author(s):  
Sankalp Kumar Singh ◽  
Pragyey Kumar Kaushik ◽  
Ramesh Kumar Kakkerla ◽  
Ankur Gupta ◽  
Deepak Anandan ◽  
...  
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
Effect Transistor ◽  
Rf Performance

scholarly journals Design of carbon nanotube field effect transistor (CNTFET) small signal model

2020 ◽  
Vol 10 (1) ◽  
pp. 180
Author(s):  
Soheli Farhana
Keyword(s):  
Carbon Nanotube ◽  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Equivalent Circuit Model ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
S Parameters ◽  
Effect Transistor

<span lang="EN-US">The progress of Carbon Nanotube Field Effect Transistor (CNTFET) devices has facilitated the trimness of mobile phones, computers and all other electronic devices. CNTFET devices contribute to model these electronics instruments that require designing the devices. This research consists of the design and verification of the CNTFET device's small signal model. Scattering parameters (S-parameters) is extracted from the CNTFET model to construct equivalent small model circuit. Current sources, capacitors and resistors are involved to evaluate this equivalent circuit. S-parameters and small signal models are elaborated to analyze using a technique to form the small signal equivalent circuit model. In this design modeling process, at first intrinsic device's Y-parameters are determined. After that series of impedances are calculated. At last, Y-parameters model are transformed to add parasitic capacitances. The analysis result shows the acquiring high frequency performances are obtained from this equivalent circuit.</span>

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