High tunneling magnetoresistance ratio in perpendicular magnetic tunnel junctions using Fe-based Heusler alloys

2015 ◽  
Vol 118 (23) ◽  
pp. 233906 ◽  
Author(s):  
Yu-Pu Wang ◽  
Sze-Ter Lim ◽  
Gu-Chang Han ◽  
Kie-Leong Teo
Keyword(s):  
Tunnel Junctions ◽  
Heusler Alloys ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Magnetoresistance Ratio

Surface Morphology of Epitaxial Magnetic Tunnel Junctions

2007 ◽  
Vol 7 (1) ◽  
pp. 255-258
Author(s):  
M. Mizuguchi ◽  
Y. Suzuki ◽  
T. Nagahama ◽  
S. Yuasa
Keyword(s):  
Surface Morphology ◽  
Flat Surface ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Magnetoresistance ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Magnetoresistance Ratio

The surface morphology of epitaxial Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions, which show the giant tunneling magnetoresistance effect, was investigated by in situ scanning tunneling microscopy. It was observed that an epitaxial MgO barrier layer forms flat surface structures. The surface was flatter with distinct steps and terraces after annealing, which would lead to an increase of the tunneling magnetoresistance ratio. Examination of the local electronic structures of 1.05-nm-thick MgO barrier layers by scanning tunneling spectroscopy revealed no pinholes in the layers, so they would be perfect barriers in magnetic tunnel junctions.

scholarly journals Surface acoustic wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

2021 ◽  
Vol 130 (3) ◽  
pp. 033901
Author(s):  
Dhritiman Bhattacharya ◽  
Peng Sheng ◽  
Md Ahsanul Abeed ◽  
Zhengyang Zhao ◽  
Hongshi Li ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Wave Induced

MAGNETORESISTANCE IN Fe/MgO/Fe MAGNETIC TUNNEL JUNCTIONS

2007 ◽  
Vol 17 (03) ◽  
pp. 593-598 ◽  
Author(s):  
N. N. BELETSKII ◽  
S. A. BORYSENKO ◽  
V. M. YAKOVENKO ◽  
G. P. BERMAN ◽  
S. A. WOLF
Keyword(s):  
Current Density ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Electron Current ◽  
Ferromagnetic Electrode ◽  
Electron Current Density

The magnetoresistance of Fe/MgO/Fe magnetic tunnel junctions (MTJs) was studied taking into consideration image forces. For MTJs with an MgO insulator, explanations are given of the giant tunneling magnetoresistance (TMR) effect and the effect of the increasing TMR with an increase in MgO insulator thickness. It is demonstrated that the electron current density through MTJs can be high enough to switch the magnetization of a ferromagnetic electrode.

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin filtering effects and high tunnel magnetoresistance via energy band difference

2021 ◽  
Author(s):  
Li Liu ◽  
Shizhuo Ye ◽  
Jin He ◽  
Qijun Huang ◽  
Hao Wang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
High Tunnel ◽  
Voltage Range ◽  
Negative Differential Resistance Effect ◽  
Magnetoresistance Ratio ◽  
Spin Filtering

Abstract Recently, the study on two-dimensional materials expands to the field of spintronics. The intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 receive much attention due to nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design the magnetic tunnel junctions of Cu/CrI3/Cu and Cu/CrBr3/Cu with the electrodes of Cu(111) and the tunneling barrier of 4-monolayer CrI3 or CrBr3. Our first-principle calculations combined with nonequilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that negative differential resistance effect is observed in the CrBr3-based MTJ. The differences of spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the inside device physics, including the spin-dependent projected density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJ.

Oscillation of giant tunneling magnetoresistance with respect to tunneling barrier thickness in fully epitaxial Fe∕MgO∕Fe magnetic tunnel junctions

2007 ◽  
Vol 90 (25) ◽  
pp. 252506 ◽  
Author(s):  
Rie Matsumoto ◽  
Akio Fukushima ◽  
Taro Nagahama ◽  
Yoshishige Suzuki ◽  
Koji Ando ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Barrier Thickness ◽  
Tunneling Barrier

Ferromagnetic barrier induced large enhancement of tunneling magnetoresistance in van der Waals perpendicular magnetic tunnel junctions

Nanoscale ◽  
2021 ◽  
Author(s):  
Xiaolin Zhang ◽  
Baishun Yang ◽  
Xiaoyan Guo ◽  
Xiufeng Han ◽  
Yu Yan
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Large Enhancement

Schematics of TMR effect of FGT/CrI3/FGT and FGT/ScI3/FGT vdW MTJs.

Spin-filtering and tunneling magnetoresistance effects in 6,6,12-graphyne-based molecular magnetic tunnel junctions

2019 ◽  
Vol 21 (5) ◽  
pp. 2734-2742 ◽  
Author(s):  
Jin Li ◽  
Maoyun Di ◽  
Zhi Yang ◽  
Li-Chun Xu ◽  
Yongzhen Yang ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Graphene Nanoribbons ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Spintronic Devices ◽  
Zigzag Graphene Nanoribbons ◽  
Spin Filtering

By designing two kinds of molecular magnetic tunnel junctions based on 6,6,12-graphyne and zigzag graphene nanoribbons, the spin-filtering and tunneling magnetoresistance effects of spintronic devices can be dramatically enhanced.

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