Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process

2015 ◽  
Vol 107 (23) ◽  
pp. 233510 ◽  
Author(s):  
Hiroki Sasakura ◽  
Yusuke Nishi ◽  
Tsunenobu Kimoto
Keyword(s):  
Temperature Dependence ◽  
Resistive Switching ◽  
Forming Process ◽  
Resistive Switching Memory ◽  
Switching Memory

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

2014 ◽  
Vol 104 (6) ◽  
pp. 062901 ◽  
Author(s):  
Chun-Yang Huang ◽  
Chung-Yu Huang ◽  
Tsung-Ling Tsai ◽  
Chun-An Lin ◽  
Tseung-Yuen Tseng
Keyword(s):  
Resistive Switching ◽  
Memory Structure ◽  
Forming Process ◽  
Resistive Switching Memory ◽  
Switching Mechanism ◽  
Switching Memory

Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory

2021 ◽  
Vol 130 (24) ◽  
pp. 244501
Author(s):  
Gauthier Lefevre ◽  
Tristan Dewolf ◽  
Nicolas Guillaume ◽  
Serge Blonkowski ◽  
Christelle Charpin-Nicolle ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Analytical Investigation ◽  
Forming Process ◽  
Resistive Switching Memory ◽  
Switching Memory

Bottom Electrode Properties and Electrical Field Cycling Effects on HfOx based Resistive Switching Memory Device

2020 ◽  
Author(s):  
J. Li ◽  
Y. Kim ◽  
D. Kong ◽  
K. Cheng ◽  
S. -C. Seo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Driving Forces ◽  
Rapid Development ◽  
Memory Device ◽  
Forming Process ◽  
Resistive Switching Memory ◽  
Voltage Bias ◽  
Before And After ◽  
Switching Memory

Abstract The continuously growing demands in high-density memories drive the rapid development of advanced memory technologies. In this work, we investigate the HfOx-based resistive switching memory (ReRAM) stack structure at nanoscale by high resolution TEM (HRTEM) and energy dispersive X-ray spectroscopy (EDX) before and after the forming process. Two identical ReRAM devices under different electrical test conditions are investigated. For the ReRAM device tested under a regular voltage bias, material redistribution and better bottom electrode contact are observed. In contrast, for the ReRAM device tested under an opposite voltage bias, different microstructure change occurs. Finite element simulations are performed to study the temperature distributions of the ReRAM cell with filaments formed at various locations relative to the bottom electrode. The applied electric field as well as the thermal heat are the driving forces for the microstructure and chemical modifications of the bottom electrode in ReRAM deceives.

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