Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

Chun-Yang Huang; Chung-Yu Huang; Tsung-Ling Tsai; Chun-An Lin; Tseung-Yuen Tseng

doi:10.1063/1.4864396

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

Applied Physics Letters ◽

10.1063/1.4864396 ◽

2014 ◽

Vol 104 (6) ◽

pp. 062901 ◽

Cited By ~ 58

Author(s):

Chun-Yang Huang ◽

Chung-Yu Huang ◽

Tsung-Ling Tsai ◽

Chun-An Lin ◽

Tseung-Yuen Tseng

Keyword(s):

Resistive Switching ◽

Memory Structure ◽

Forming Process ◽

Resistive Switching Memory ◽

Switching Mechanism ◽

Switching Memory

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Fabrication of resistive switching memory structure using double-sided-anodized porous alumina

Solid-State Electronics ◽

10.1016/j.sse.2017.02.007 ◽

2017 ◽

Vol 131 ◽

pp. 30-33 ◽

Cited By ~ 2

Author(s):

Yoshitaka Morishita ◽

Takaya Hosono ◽

Hiroto Ogawa

Keyword(s):

Resistive Switching ◽

Porous Alumina ◽

Memory Structure ◽

Resistive Switching Memory ◽

Switching Memory

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Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices

Microelectronics Reliability ◽

10.1016/j.microrel.2014.07.118 ◽

2014 ◽

Vol 54 (9-10) ◽

pp. 2266-2271 ◽

Cited By ~ 3

Author(s):

Nagarajan Raghavan ◽

Michel Bosman ◽

Daniel D. Frey ◽

Kin Leong Pey

Keyword(s):

Oxygen Vacancy ◽

Resistive Switching ◽

Memory Devices ◽

Forming Process ◽

Resistive Switching Memory ◽

Variability Model ◽

Switching Memory

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Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte

Nanoscale Research Letters ◽

10.1186/1556-276x-7-614 ◽

2012 ◽

Vol 7 (1) ◽

pp. 614 ◽

Cited By ~ 24

Author(s):

Sheikh Rahaman ◽

Siddheswar Maikap ◽

Atanu Das ◽

Amit Prakash ◽

Ya Wu ◽

...

Keyword(s):

Solid Electrolyte ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Switching Mechanism ◽

Memory Characteristics ◽

Switching Memory

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Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory

Journal of Applied Physics ◽

10.1063/5.0072343 ◽

2021 ◽

Vol 130 (24) ◽

pp. 244501

Author(s):

Gauthier Lefevre ◽

Tristan Dewolf ◽

Nicolas Guillaume ◽

Serge Blonkowski ◽

Christelle Charpin-Nicolle ◽

...

Keyword(s):

Resistive Switching ◽

Analytical Investigation ◽

Forming Process ◽

Resistive Switching Memory ◽

Switching Memory

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Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process

Applied Physics Letters ◽

10.1063/1.4937490 ◽

2015 ◽

Vol 107 (23) ◽

pp. 233510 ◽

Cited By ~ 12

Author(s):

Hiroki Sasakura ◽

Yusuke Nishi ◽

Tsunenobu Kimoto

Keyword(s):

Temperature Dependence ◽

Resistive Switching ◽

Forming Process ◽

Resistive Switching Memory ◽

Switching Memory

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Unified switching mechanism for reversible change between unipolar and bipolar switching modes of oxide resistive switching memory devices

Applied Physics A ◽

10.1007/s00339-017-0936-z ◽

2017 ◽

Vol 123 (5) ◽

Cited By ~ 1

Author(s):

Sang-Jun Choi ◽

Ki-Hong Kim ◽

Woo-Young Yang ◽

Sohyeon Kim ◽

Semi Oh ◽

...

Keyword(s):

Resistive Switching ◽

Memory Devices ◽

Reversible Change ◽

Resistive Switching Memory ◽

Switching Mechanism ◽

Bipolar Switching ◽

Switching Memory

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Investigation of forming process for metal oxide-based resistive switching memory by stochastic simulation

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2014.7021529 ◽

2014 ◽

Author(s):

Peng Huang ◽

Xiaoyan Liu ◽

Yudi Zhao ◽

Bing Chen ◽

Bin Gao ◽

...

Keyword(s):

Metal Oxide ◽

Stochastic Simulation ◽

Resistive Switching ◽

Forming Process ◽

Resistive Switching Memory ◽

Switching Memory

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Overview of resistive switching memory (RRAM) switching mechanism and device modeling

2014 IEEE International Symposium on Circuits and Systems (ISCAS) ◽

10.1109/iscas.2014.6865560 ◽

2014 ◽

Cited By ~ 7

Author(s):

Shimeng Yu

Keyword(s):

Resistive Switching ◽

Device Modeling ◽

Resistive Switching Memory ◽

Switching Mechanism ◽

Switching Memory

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The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory

Applied Physics Letters ◽

10.1063/1.4976512 ◽

2017 ◽

Vol 110 (7) ◽

pp. 073501 ◽

Cited By ~ 43

Author(s):

Cong Hu ◽

Qi Wang ◽

Shuai Bai ◽

Min Xu ◽

Deyan He ◽

...

Keyword(s):

Oxygen Vacancy ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Switching Mechanism ◽

Effect Of Oxygen ◽

Switching Memory

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Effect of crystalline state on conductive filaments forming process in resistive switching memory devices

Materials Today Communications ◽

10.1016/j.mtcomm.2019.100540 ◽

2019 ◽

Vol 20 ◽

pp. 100540 ◽

Cited By ~ 1

Author(s):

Tao Guo ◽

Hosameldeen Elshekh ◽

Zhou Yu ◽

Bo Yu ◽

Dan Wang ◽

...

Keyword(s):

Resistive Switching ◽

Crystalline State ◽

Memory Devices ◽

Forming Process ◽

Resistive Switching Memory ◽

Switching Memory

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