scholarly journals Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

2015 ◽  
Vol 107 (21) ◽  
pp. 213501 ◽  
Author(s):  
L. N. Liu ◽  
H. W. Choi ◽  
J. P. Xu ◽  
P. T. Lai
Keyword(s):  
Metal Oxide ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Passivation Layer ◽  
Oxide Semiconductor ◽  
Oxide Traps ◽  
Metal Oxide Semiconductor Capacitor

Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor

2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1222-1226 ◽  
Author(s):  
In Sang Jeon ◽  
Jaehoo Park ◽  
Dail Eom ◽  
Cheol Seong Hwang ◽  
Hyeong Joon Kim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Fixed Charge ◽  
Oxide Semiconductor ◽  
Post Annealing ◽  
Annealing Effects ◽  
Metal Oxide Semiconductor Capacitor
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