HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

G. He; L. D. Zhang; M. Liu; Z. Q. Sun

doi:10.1063/1.3475015

HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.3475015 ◽

2010 ◽

Vol 97 (6) ◽

pp. 062908 ◽

Cited By ~ 25

Author(s):

G. He ◽

L. D. Zhang ◽

M. Liu ◽

Z. Q. Sun

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Aluminum Oxynitride ◽

Metal Oxide Semiconductor Capacitor

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Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700180 ◽

2017 ◽

Vol 11 (9) ◽

pp. 1700180 ◽

Cited By ~ 4

Author(s):

Li Ning Liu ◽

Hoi Wai Choi ◽

Jing Ping Xu ◽

Pui To Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2017.2702717 ◽

2017 ◽

Vol 17 (2) ◽

pp. 458-462 ◽

Cited By ~ 4

Author(s):

Han-Han Lu ◽

Jing-Ping Xu ◽

Lu Liu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2762291 ◽

2007 ◽

Vol 91 (4) ◽

pp. 042904 ◽

Cited By ~ 28

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Manhong Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Scaling Down ◽

Metal Oxide Semiconductor Capacitor

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Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2396972 ◽

2015 ◽

Vol 62 (4) ◽

pp. 1235-1240 ◽

Cited By ~ 9

Author(s):

Li-Sheng Wang ◽

Jing-Ping Xu ◽

Lu Liu ◽

Han-Han Lu ◽

Pui-To Lai ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.2775048 ◽

2007 ◽

Vol 91 (8) ◽

pp. 082908 ◽

Cited By ~ 5

Author(s):

Sung Il Park ◽

Injo Ok ◽

Hyoung-Sub Kim ◽

Feng Zhu ◽

Manhong Zhang ◽

...

Keyword(s):

Gallium Arsenide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Interface Passivation ◽

Silicon Interface ◽

Metal Oxide Semiconductor Capacitor

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Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

Applied Physics Letters ◽

10.1063/1.4936329 ◽

2015 ◽

Vol 107 (21) ◽

pp. 213501 ◽

Cited By ~ 14

Author(s):

L. N. Liu ◽

H. W. Choi ◽

J. P. Xu ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Oxide Traps ◽

Metal Oxide Semiconductor Capacitor

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Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Layer

Chinese Physics Letters ◽

10.1088/0256-307x/34/4/047303 ◽

2017 ◽

Vol 34 (4) ◽

pp. 047303 ◽

Cited By ~ 1

Author(s):

Han-Han Lu ◽

Jing-Ping Xu ◽

Lu Liu

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2777938 ◽

2018 ◽

Vol 65 (1) ◽

pp. 72-78 ◽

Cited By ~ 3

Author(s):

L. N. Liu ◽

H. W. Choi ◽

J. P. Xu ◽

W. M. Tang ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor

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Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2356597 ◽

2014 ◽

Vol 61 (11) ◽

pp. 3608-3612 ◽

Cited By ~ 9

Author(s):

Feng Ji ◽

Jing-Ping Xu ◽

Yong Huang ◽

Lu Liu ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

Journal of Materials Chemistry C ◽

10.1039/d0tc04725b ◽

2021 ◽

Author(s):

Dong Gun Kim ◽

Cheol Hyun An ◽

Sanghyeon Kim ◽

Dae Seon Kwon ◽

Junil Lim ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Tio2 Film ◽

Single Layer ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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