GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer

2018 ◽  
Vol 65 (1) ◽  
pp. 72-78 ◽  
Author(s):  
L. N. Liu ◽  
H. W. Choi ◽  
J. P. Xu ◽  
W. M. Tang ◽  
P. T. Lai
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Passivation Layer ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

2007 ◽  
Vol 91 (9) ◽  
pp. 093509 ◽  
Author(s):  
N. Goel ◽  
P. Majhi ◽  
W. Tsai ◽  
M. Warusawithana ◽  
D. G. Schlom ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Indium Content ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Indium Content ◽  
Metal Oxide Semiconductor Capacitor

Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor

2012 ◽  
Vol 112 (3) ◽  
pp. 034514 ◽  
Author(s):  
Souvik Kundu ◽  
Nripendra N. Halder ◽  
D. Biswas ◽  
P. Banerji ◽  
T. Shripathi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
High K Dielectric ◽  
Metal Oxide Semiconductor Capacitor
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