Electron affinity of cubic boron nitride terminated with vanadium oxide

2015 ◽  
Vol 118 (16) ◽  
pp. 165310 ◽  
Author(s):  
Yu Yang ◽  
Tianyin Sun ◽  
Joseph Shammas ◽  
Manpuneet Kaur ◽  
Mei Hao ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Vanadium Oxide ◽  
Electron Affinity ◽  
Cubic Boron Nitride

Negative electron affinity of cubic boron nitride

1999 ◽  
Vol 8 (2-5) ◽  
pp. 781-784 ◽  
Author(s):  
Kian Ping Loh ◽  
Isao Sakaguchi ◽  
Mikka Nishitani-Gamo ◽  
Takashi Taniguchi ◽  
Toshihiro Ando
Keyword(s):  
Boron Nitride ◽  
Electron Affinity ◽  
Cubic Boron Nitride ◽  
Negative Electron Affinity

Thermal stability of the negative electron affinity condition on cubic boron nitride

1998 ◽  
Vol 72 (23) ◽  
pp. 3023-3025 ◽  
Author(s):  
Kian Ping Loh ◽  
Mikka Nishitani-Gamo ◽  
Isao Sakaguchi ◽  
Takashi Taniguchi ◽  
Toshihiro Ando
Keyword(s):  
Thermal Stability ◽  
Boron Nitride ◽  
Electron Affinity ◽  
Cubic Boron Nitride ◽  
Negative Electron Affinity ◽  
Thermal Stability Of

Structural relationships in the synthesis of cubic boron nitride thin films by ion-assisted deposition

1994 ◽  
Vol 52 ◽  
pp. 638-639
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
M. J. Mills ◽  
K. F. McCarty
Keyword(s):  
Boron Nitride ◽  
Ion Irradiation ◽  
Cubic Boron Nitride ◽  
Film Stress ◽  
Bonded Phases ◽  
Structural Relationships ◽  
Precursor Material ◽  
Pressure Synthesis ◽  
Microstructure Of The Material

The allotropes of boron nitride include two sp2-bonded phases with hexagonal and rhombohedral structures (hBN and rBN) and two sp3-bonded phases with cubic (zincblende) and hexagonal (wurtzitic) structures (cBN and wBN) (Fig. 1). Although cBN is synthesized in bulk form by conversion of hBN at high temperatures and pressures, low-pressure synthesis of cBN as a thin film is more difficult and succeeds only when the growing film is simultaneously irradiated with a high flux of ions. Only sp2-bonded material, which generally has a disordered, turbostratic microstructure (tBN), will form in the absence of ion-irradiation. The mechanistic role of the irradiation is not well understood, but recent work suggests that ion-induced compressive film stress may induce the transformation to cBN.Typically, BN films are deposited at temperatures less than 1000°C, a regime for which the structure of the sp2-bonded precursor material dictates the phase and microstructure of the material that forms from conventional (bulk) high pressure treatment.

Theoretical and experimental investigation of point defects in cubic boron nitride

MRS Advances ◽  
2017 ◽  
Vol 2 (29) ◽  
pp. 1545-1550 ◽  
Author(s):  
Nicholas L. McDougall ◽  
Jim G. Partridge ◽  
Desmond W. M. Lau ◽  
Philipp Reineck ◽  
Brant C. Gibson ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Optical Emission ◽  
Wide Band ◽  
Wide Band Gap ◽  
Edge Structure ◽  
X Ray ◽  
Substitutional Defects ◽  
X Ray Absorption ◽  
Annealing Experiments

ABSTRACTCubic boron nitride (cBN) is a synthetic wide band gap material that has attracted attention due to its high thermal conductivity, optical transparency and optical emission. In this work, defects in cBN have been investigated using experimental and theoretical X-ray absorption near edge structure (XANES). Vacancy and O substitutional defects were considered, with O substituted at the N site (ON) to be the most energetically favorable. All defects produce unique signatures in either the B or N K-edges and can thus be identified using XANES. The calculations coupled with electron-irradiation / annealing experiments strongly suggest that ON is the dominant defect in irradiated cBN and remains after annealing. This defect is a likely source of optical emission in cBN.

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