High-mobility thin film transistors with neodymium-substituted indium oxide active layer

2015 ◽  
Vol 107 (11) ◽  
pp. 112108 ◽  
Author(s):  
Zhenguo Lin ◽  
Peng Xiao ◽  
Sheng Sun ◽  
Yuzhi Li ◽  
Wei Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Active Layer ◽  
Thin Film Transistors ◽  
High Mobility

High-mobility flexible thin-film transistors with a low-temperature zirconium-doped indium oxide channel layer

2016 ◽  
Vol 10 (6) ◽  
pp. 493-497 ◽  
Author(s):  
Peng Xiao ◽  
Ting Dong ◽  
Linfeng Lan ◽  
Zhenguo Lin ◽  
Wei Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Channel Layer

High-Mobility and Good-Stability Thin-Film Transistors With Scandium-Substituted Indium Oxide Semiconductors

2016 ◽  
Vol 63 (11) ◽  
pp. 4315-4319 ◽  
Author(s):  
Wei Song ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Good Stability ◽  
Oxide Semiconductors

The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility

2012 ◽  
Vol 100 (17) ◽  
pp. 173501 ◽  
Author(s):  
Hyun-Sik Choi ◽  
Sanghun Jeon ◽  
Hojung Kim ◽  
Jaikwang Shin ◽  
Changjung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
High Mobility ◽  
Active Layer Thickness ◽  
Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

Double active layer InZnO:N/InZnSnO thin film transistors with high mobility at low annealing temperature

2018 ◽  
Vol 30 (2) ◽  
pp. 1496-1499 ◽  
Author(s):  
Ye Wang ◽  
Jinbao Su ◽  
Shiqian Dai ◽  
Ran Li ◽  
Yaobin Ma ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
High Mobility

scholarly journals Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1295
Author(s):  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Hwan-Seok Jeong ◽  
Seong-Hyun Hwang ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Layer Thickness ◽  
Active Layer ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Active Layer Thickness ◽  
Electrical Characteristics ◽  
Indium Gallium

Herein, we investigated the effects of active layer thickness (tS) on the electrical characteristics and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs). IGTO TFTs, with tS values of 7 nm, 15 nm, 25 nm, 35 nm, and 50 nm, were prepared for this analysis. The drain current was only slightly modulated by the gate-to-source voltage, in the case of the IGTO TFT with tS = 50 nm. Under positive bias stress (PBS), the electrical stability of the IGTO TFTs with a tS less than 35 nm improved as the tS increased. However, the negative bias illumination stress (NBIS) stability of these IGTO TFTs deteriorated as the tS increased. To explain these phenomena, we compared the O1s spectra of IGTO thin films with different tS values, acquired using X-ray photoelectron spectroscopy. The characterization results revealed that the better PBS stability, and the low NBIS stability, of the IGTO TFTs with thicker active layers were mainly due to a decrease in the number of hydroxyl groups and an increase in the number of oxygen vacancies in the IGTO thin films with an increase in tS, respectively. Among the IGTO TFTs with different tS, the IGTO TFT with a 15-nm thick active layer exhibited the best electrical characteristics with a field-effect mobility (µFE) of 26.5 cm2/V·s, a subthreshold swing (SS) of 0.16 V/dec, and a threshold voltage (VTH) of 0.3 V. Moreover, the device exhibited robust stability under PBS (ΔVTH = 0.9 V) and NBIS (ΔVTH = −1.87 V).

Electrical Properties of Solution Processed In–Ga–ZnO Thin Film Transistors with Multi-Stacked Active Layer

2015 ◽  
Vol 15 (10) ◽  
pp. 7508-7512 ◽  
Author(s):  
Soon Kon Kim ◽  
Pyung Ho Choi ◽  
Sang Sub Kim ◽  
Hyun Woo Kim ◽  
Na Young Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Active Layer ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Threshold Voltage Shift ◽  
Active Layers ◽  
Current Path

In this study, we prepared solution-based In–Ga–ZnO thin film transistors (IGZO TFTs) having a multistacked active layer. The solution was prepared using an In:Zn = 1:1 mole ratio with variation in Ga content, and the TFTs were fabricated by stacking layers from the prepared solutions. After we measured the mobility of each stacked layer, the saturation mobility showed values of 0.8, 0.6 and 0.4 (cm2/Vs), with an overall decrease in electrical properties. The interface formed between the each layers affected the current path, resulting in reduced electrical performance. However, when the gate bias VG = 10 V was applied for 1500 s, the threshold voltage shift decreased in the stack. The uniformity of the active layer was improved in the stacked active layer by filling the hole formed during pre-baking, resulting in improved device stability. Also, the indium ratio was increased to enhance the mobility from 0.86 to 3.47. These results suggest high mobility and high stability devices can be produced with multistacked active layers.

Back-Channel-Etched Thin-Film Transistors With Tunable Acid-Resistant Zr-Doped Indium Oxide Active Layer

2019 ◽  
Vol 66 (1) ◽  
pp. 464-469 ◽  
Author(s):  
Peng Xiao ◽  
Junhua Huang ◽  
Ting Dong ◽  
Jian Yuan ◽  
Jianwen Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Active Layer ◽  
Thin Film Transistors
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