The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility

2012 ◽  
Vol 100 (17) ◽  
pp. 173501 ◽  
Author(s):  
Hyun-Sik Choi ◽  
Sanghun Jeon ◽  
Hojung Kim ◽  
Jaikwang Shin ◽  
Changjung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
High Mobility ◽  
Active Layer Thickness ◽  
Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

scholarly journals Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1295
Author(s):  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Hwan-Seok Jeong ◽  
Seong-Hyun Hwang ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Layer Thickness ◽  
Active Layer ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Active Layer Thickness ◽  
Electrical Characteristics ◽  
Indium Gallium

Herein, we investigated the effects of active layer thickness (tS) on the electrical characteristics and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs). IGTO TFTs, with tS values of 7 nm, 15 nm, 25 nm, 35 nm, and 50 nm, were prepared for this analysis. The drain current was only slightly modulated by the gate-to-source voltage, in the case of the IGTO TFT with tS = 50 nm. Under positive bias stress (PBS), the electrical stability of the IGTO TFTs with a tS less than 35 nm improved as the tS increased. However, the negative bias illumination stress (NBIS) stability of these IGTO TFTs deteriorated as the tS increased. To explain these phenomena, we compared the O1s spectra of IGTO thin films with different tS values, acquired using X-ray photoelectron spectroscopy. The characterization results revealed that the better PBS stability, and the low NBIS stability, of the IGTO TFTs with thicker active layers were mainly due to a decrease in the number of hydroxyl groups and an increase in the number of oxygen vacancies in the IGTO thin films with an increase in tS, respectively. Among the IGTO TFTs with different tS, the IGTO TFT with a 15-nm thick active layer exhibited the best electrical characteristics with a field-effect mobility (µFE) of 26.5 cm2/V·s, a subthreshold swing (SS) of 0.16 V/dec, and a threshold voltage (VTH) of 0.3 V. Moreover, the device exhibited robust stability under PBS (ΔVTH = 0.9 V) and NBIS (ΔVTH = −1.87 V).

Analysis of low frequency noise characteristics in p-type polycrystalline silicon thin film transistors

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740020
Author(s):  
Yuan Liu ◽  
Yun-Fei En ◽  
Wen-Xiao Fang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Gate Oxide ◽  
Localized States ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Characteristics ◽  
P Type

Low frequency noises in the p-type polycrystalline silicon thin film transistors are investigated. It shows a pure 1/f[Formula: see text] (with [Formula: see text] near one) noise behavior which can be explained by emission and trapping processes of carriers between trapping states. Subsequently, the gate voltage-dependent drain current noise power spectral densities closely follow the mobility fluctuation model, and the average Hooge’s parameter is then extracted. By considering traditional tunneling processes, the flat-band voltage spectral density is extracted and the concentration of traps in the grain boundary is calculated to be [Formula: see text]. By converting the frequency to tunneling depth of carriers in the gate oxide, the spatial distribution of gate oxide trapped charges are obtained. Finally, the distribution of localized states in the energy band is extracted. The experimental results show an exponential deep states and tail states distribution in the band gap while [Formula: see text] is about [Formula: see text], [Formula: see text] is [Formula: see text][Formula: see text]617 K, [Formula: see text] is [Formula: see text] and [Formula: see text] is [Formula: see text][Formula: see text]265 K.

Active-layer Thickness Effects Related to the Threshold Voltage and Mobility Degradation in Poly-crystalline ZnO Thin-Film Transistors

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1307-1311 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
Jeong-Gyu Park ◽  
Seung-Dong Yang ◽  
Ho-Jin Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Zno Thin Film ◽  
Mobility Degradation

Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

2019 ◽  
Vol 28 (8) ◽  
pp. 088502
Author(s):  
Chao-Yang Han ◽  
Yuan Liu ◽  
Yu-Rong Liu ◽  
Ya-Yi Chen ◽  
Li Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Gate Bias ◽  
Stress Effects ◽  
Bias Stress ◽  
Noise Characteristics ◽  
P Type ◽  
Si Thin Film
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