scholarly journals Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition

2015 ◽  
Vol 118 (11) ◽  
pp. 115303 ◽  
Author(s):  
Thong Q. Ngo ◽  
Nicholas J. Goble ◽  
Agham Posadas ◽  
Kristy J. Kormondy ◽  
Sirong Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Electron Gas ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Layer Deposition ◽  
Dimensional Electron Gas

scholarly journals Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Sang Woon Lee
Keyword(s):  
Atomic Layer Deposition ◽  
Electron Gas ◽  
Atomic Layer ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Oxide Heterostructures ◽  
Layer Deposition ◽  
Dimensional Electron Gas

Two-dimensional electron gas (2DEG) at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures) with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3(LAO/STO) heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD) technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies).

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