Capacitively induced high mobility two-dimensional electron gas in undoped Si∕Si1−xGex heterostructures with atomic-layer-deposited dielectric

2007 ◽  
Vol 90 (18) ◽  
pp. 182114 ◽  
Author(s):  
T. M. Lu ◽  
J. Liu ◽  
J. Kim ◽  
K. Lai ◽  
D. C. Tsui ◽  
...  
2007 ◽  
Vol 21 (08n09) ◽  
pp. 1579-1583 ◽  
Author(s):  
S. Moreau ◽  
O. M. Fedorych ◽  
M. L. Sadowski ◽  
M. Potemski ◽  
S. Studenikin ◽  
...  

In this paper, we study the behavior of a high mobility two dimensional electron gas under microwave irradiation by means of magneto-photoluminescence (PL) and absorption measurements. The high mobility sample investigated is a 15nm wide GaAs/AlGaAs quantum well with an electron concentration between 1-2×1011 cm -2, tunable by visible-light illumination. Structures in the microwave absorption at 40-60GHz are identified as geometrically confined magneto-plasmons.


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