scholarly journals Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097103 ◽  
Author(s):  
Arjun Shetty ◽  
Basanta Roul ◽  
Shruti Mukundan ◽  
Lokesh Mohan ◽  
Greeshma Chandan ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Temperature Dependent ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Title: Inkjet-printed rectifying metal-insulator-semiconductor (MIS) diodes for flexible electronic applications

2014 ◽  
Vol 1628 ◽  
Author(s):  
Kalyan Yoti Mitra ◽  
Carme Martínez-Domingo ◽  
Enrico Sowade ◽  
Eloi Ramon ◽  
Henrique Leonel Gomes ◽  
...  
Keyword(s):  
Inkjet Printing ◽  
Printed Electronics ◽  
Schottky Diodes ◽  
Functional Materials ◽  
Industrial Applications ◽  
Plastic Substrate ◽  
Organic Thin Film ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Diode

ABSTRACTInkjet printing is a well-accepted deposition technology for functional materials in the area of printed electronics. It allows the precise deposition of patterned functional layers on both, rigid and flexible substrates. Furthermore, inkjet printing is considered as up-scalable technology towards industrial applications. Many electronic devices manufactured with inkjet printing have been reported in the recent years. Some of the evident examples are capacitors, resistors, organic thin film transistors and rectifying Schottky diodes. [1, 2, 3] In this paper we report on the manufacturing of an inkjet-printed metal-insulator-semiconductor (MIS) diode on flexible plastic substrate. The structure is comprised of an insulating and a polymeric semiconducting layer sandwiched between two silver electrodes. The current vs. voltage characteristics are rectifying with rectification ratio up to 100 at |4 V|. Furthermore, they can carry high current densities (up to mA/cm2) and have a low capacitance which makes them attractive for high frequency rectifying circuits. They are also an ideal candidate to replace conventional Schottky diodes for which the fabrication remains a challenge. This is because inkjet printing of Schottky diodes require additional processing steps such as intense pulsed light sintering (IPL sintering) [4] or post-treatments at high temperatures. The deposition of two different metal layers using inkjet printing e.g. Cu or Al with Ag is possible. However, the mentioned post treatment technologies might be incompatible with the already existing layer stack– e.g. it could degrade the organic semiconductor or can damage insulator which in this case is present in the MIS diode architecture.

Blue luminescence and Schottky diode applications of monoclinic HfO2 nanostructures

RSC Advances ◽  
2016 ◽  
Vol 6 (63) ◽  
pp. 57941-57947 ◽  
Author(s):  
G. Mohan Kumar ◽  
P. Ilanchezhiyan ◽  
Fu Xiao ◽  
C. Siva ◽  
A. Madhan Kumar ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Schottky Diodes ◽  
Blue Luminescence ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Schottky diodes based on metal–semiconductor (MS) and metal–insulator–semiconductor (MIS) configurations are nowadays widely regarded as key components for the realization of a number of improved electronic and optoelectronic functions.

Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes

2014 ◽  
Vol 1736 ◽  
Author(s):  
Arjun Shetty ◽  
Basanta Roul ◽  
Shruti Mukundan ◽  
Greeshma Chandan ◽  
Lokesh Mohan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Reverse Current ◽  
X Ray Diffraction ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Sapphire Substrates ◽  
Contact Metal

ABSTRACTGallium nitride (n-type) films of thickness 300nm were grown on c-plane sapphire substrates using plasma assisted molecular beam epitaxy (PA-MBE). High resolution X-ray diffraction and photoluminescence measurements were used to confirm the crystalline and optical qualities of the grown films. Metal-semiconductor Schottky diodes were fabricated using Pt as the Schottky metal and Al as the Ohmic metal contact. Metal-insulator-semiconductor Schottky diodes were also fabricated using HfO2 (10nm) as the insulator material. Diode parameters like barrier height and ideality factor were extracted from I-V measurements. Introduction of HfO2 as the insulator layer leads to better rectifying behavior (forward to reverse current ratio improves from 5.1 to 8.9) with a reduction in reverse leakage current (by 7.4 times), increase in barrier height (from 0.62eV to 0.74eV) and a reduction in ideality factor (from 6 to 4.1) of the Schottky diode.

The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes

2015 ◽  
Vol 1118 ◽  
pp. 270-275 ◽  
Author(s):  
Xian Gao ◽  
Ji Long Tang ◽  
Dan Fang ◽  
Fang Chen ◽  
Shuang Peng Wang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Interface Layer ◽  
Experimental Result ◽  
Electrical Characteristics ◽  
Semiconductor Interface ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-voltage (I-V) characteristics. Experimental result showed that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.

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