Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes

2014 ◽  
Vol 1736 ◽  
Author(s):  
Arjun Shetty ◽  
Basanta Roul ◽  
Shruti Mukundan ◽  
Greeshma Chandan ◽  
Lokesh Mohan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Reverse Current ◽  
X Ray Diffraction ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Sapphire Substrates ◽  
Contact Metal

ABSTRACTGallium nitride (n-type) films of thickness 300nm were grown on c-plane sapphire substrates using plasma assisted molecular beam epitaxy (PA-MBE). High resolution X-ray diffraction and photoluminescence measurements were used to confirm the crystalline and optical qualities of the grown films. Metal-semiconductor Schottky diodes were fabricated using Pt as the Schottky metal and Al as the Ohmic metal contact. Metal-insulator-semiconductor Schottky diodes were also fabricated using HfO2 (10nm) as the insulator material. Diode parameters like barrier height and ideality factor were extracted from I-V measurements. Introduction of HfO2 as the insulator layer leads to better rectifying behavior (forward to reverse current ratio improves from 5.1 to 8.9) with a reduction in reverse leakage current (by 7.4 times), increase in barrier height (from 0.62eV to 0.74eV) and a reduction in ideality factor (from 6 to 4.1) of the Schottky diode.

The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes

2015 ◽  
Vol 1118 ◽  
pp. 270-275 ◽  
Author(s):  
Xian Gao ◽  
Ji Long Tang ◽  
Dan Fang ◽  
Fang Chen ◽  
Shuang Peng Wang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Interface Layer ◽  
Experimental Result ◽  
Electrical Characteristics ◽  
Semiconductor Interface ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Structures

Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-voltage (I-V) characteristics. Experimental result showed that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN

2020 ◽  
Vol 20 (8) ◽  
pp. 4678-4683
Author(s):  
Jun Hyeok Jung ◽  
Min Su Cho ◽  
Won Douk Jang ◽  
Sang Ho Lee ◽  
Jaewon Jang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
High Electron ◽  
Insulator Layer ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Dual Gate ◽  
Recessed Gate

In this work, we present a normally-off recessed-gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) using a TiO2/SiN dual gate-insulator. We analyzed the electrical characteristics of the proposed device and found that the dual gate-insulator device achieves higher on-state currents than the device using a SiN gate-insulator because the high-k insulator layer of the dual gate-insulator improves the gate-controllability. The device using a TiO2/SiN gate-insulator shows better gate leakage current characteristics than the device with only TiO2 gate-insulator because of the high quality SiN gate-insulator. Therefore, the device using a dual gate-insulator can overcome disadvantages of a device using only TiO2 gate-insulator. To better predict the power consumption and the switching speed, we simulated the specific on-resistance (Ron, sp) according to the gate-to-drain distance (LGD) using the two-dimensional ATLAS simulator. The proposed device exhibits a threshold voltage of 2.3 V, a maximum drain current of 556 mA/mm, a low Ron, sp of 1.45 mΩ·cm2, and a breakdown voltage of 631 V at an off-state current of 1 μA/mm with VGS = 0 V. We have confirmed that a normally-off recessed-gate AlGaN/GaN MIS-HEMT using a TiO2/SiN dual gate-insulator is a promising candidate for power electronic applications.

Title: Inkjet-printed rectifying metal-insulator-semiconductor (MIS) diodes for flexible electronic applications

2014 ◽  
Vol 1628 ◽  
Author(s):  
Kalyan Yoti Mitra ◽  
Carme Martínez-Domingo ◽  
Enrico Sowade ◽  
Eloi Ramon ◽  
Henrique Leonel Gomes ◽  
...  
Keyword(s):  
Inkjet Printing ◽  
Printed Electronics ◽  
Schottky Diodes ◽  
Functional Materials ◽  
Industrial Applications ◽  
Plastic Substrate ◽  
Organic Thin Film ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Diode

ABSTRACTInkjet printing is a well-accepted deposition technology for functional materials in the area of printed electronics. It allows the precise deposition of patterned functional layers on both, rigid and flexible substrates. Furthermore, inkjet printing is considered as up-scalable technology towards industrial applications. Many electronic devices manufactured with inkjet printing have been reported in the recent years. Some of the evident examples are capacitors, resistors, organic thin film transistors and rectifying Schottky diodes. [1, 2, 3] In this paper we report on the manufacturing of an inkjet-printed metal-insulator-semiconductor (MIS) diode on flexible plastic substrate. The structure is comprised of an insulating and a polymeric semiconducting layer sandwiched between two silver electrodes. The current vs. voltage characteristics are rectifying with rectification ratio up to 100 at |4 V|. Furthermore, they can carry high current densities (up to mA/cm2) and have a low capacitance which makes them attractive for high frequency rectifying circuits. They are also an ideal candidate to replace conventional Schottky diodes for which the fabrication remains a challenge. This is because inkjet printing of Schottky diodes require additional processing steps such as intense pulsed light sintering (IPL sintering) [4] or post-treatments at high temperatures. The deposition of two different metal layers using inkjet printing e.g. Cu or Al with Ag is possible. However, the mentioned post treatment technologies might be incompatible with the already existing layer stack– e.g. it could degrade the organic semiconductor or can damage insulator which in this case is present in the MIS diode architecture.

On the temperature dependence of the barrier height and the ideality factor in high voltage NinGaAs schottky diodes

1996 ◽  
Vol 39 (10) ◽  
pp. 1457-1462 ◽  
Author(s):  
M. Nathan ◽  
Z. Shoshani ◽  
G. Ashkinazi ◽  
B. Meyler ◽  
O. Zolotarevski
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
High Voltage ◽  
Ideality Factor ◽  
Schottky Diodes

Electrical Characterization of Metal Insulator Semiconductor Using ZnO Low Deposition Temperature as Semiconductor Layer

2013 ◽  
Vol 832 ◽  
pp. 270-275 ◽  
Author(s):  
Lyly Nyl Ismail ◽  
Saifullah Ali Harun ◽  
Habibah Zulkefle ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Deposition Temperature ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Semiconductor Layer ◽  
Zno Films ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Low Deposition Temperature ◽  
Mis Structures

We report on the influence of the low deposition temperature of ZnO as semiconductor layer on the electrical characteristics of metal-insulator-semiconductor (MIS) structures. The ZnO films were deposited by radio frequency (RF) magnetron sputtering with variation of temperature from 40°C, 60°C, 80°C, 100°C and 120°C. PMMA were used as insulator layer in the MIS structures. It is found that the ZnO films grown at 120°C has better crystallinity compared to other temperature. I-V characteristics results shown that the different deposition temperature of ZnO films affect the performance of MIS.

Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes

2012 ◽  
Vol 98 ◽  
pp. 6-11 ◽  
Author(s):  
Durmuş Ali Aldemir ◽  
Ali Kökce ◽  
Ahmet Faruk Özdemir
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Temperature Dependent

scholarly journals Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097103 ◽  
Author(s):  
Arjun Shetty ◽  
Basanta Roul ◽  
Shruti Mukundan ◽  
Lokesh Mohan ◽  
Greeshma Chandan ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Temperature Dependent ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
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