The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

2010 ◽  
Vol 108 (6) ◽  
pp. 064506 ◽  
Author(s):  
İlke Taşçıoğlu ◽  
Umut Aydemir ◽  
Şemsettin Altındal
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Interfacial Layer ◽  
Schottky Barrier Diodes

Comparison of Parameter Extraction Techniques for SiC Schottky Diodes

2006 ◽  
Vol 911 ◽  
Author(s):  
Ming Hung Weng ◽  
Alton B. Horsfall ◽  
Nick G. Wright ◽  
Konstantin V. Vassilevski ◽  
Irina P. Nikitina
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Interfacial Layer ◽  
Schottky Diodes ◽  
Extreme Environments ◽  
Parameter Extraction ◽  
Emission Model ◽  
Schottky Barrier Diodes ◽  
Extraction Techniques

AbstractSchottky barrier diodes fabricated on Silicon carbide have been demonstrated as gas sensors for deployment in extreme environments. It has been shown that the interfacial layer formed at the Metal – Semiconductor junction, determines both the sensitivity and the reliability of the device. Hence, accurate knowledge of the thickness and interfacial trap density of this layer is required to make predictions of the behaviour of the sensor in the environment under investigation and to predict its variation with time. Diode parameters, such as the ideality factor, barrier height and series resistance have been extracted from experimental measurements on Palladium Schottky Barrier diodes on 4H SiC, over a range of temperatures. The comparison of the parameters extracted from modified Norde function, Cheung's method and Thermonic Emission model has been performed. The variation in the barrier height obtained is quite marked between the different techniques. The reverse I-V characteristics have been used to extract thickness of the interfacial layer, by fitting to the experimental data using the TEBIL model to extract the value of Dit from ä and the ideality factor, assuming the interfacial layer is stoichiometric SiO2 . This allows a comparison between the effective interfacial layer behaviour for the different parameter extraction techniques and demonstrates that knowledge of this interfacial layer is influenced by the technique selected.

TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES

2008 ◽  
Vol 22 (14) ◽  
pp. 2309-2319 ◽  
Author(s):  
K. ERTURK ◽  
M. C. HACIISMAILOGLU ◽  
Y. BEKTORE ◽  
M. AHMETOGLU
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Semiconductor Interface ◽  
Linear Portion ◽  
Barrier Heights ◽  
P Type

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

scholarly journals Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)

2010 ◽  
Vol 13 (5-6) ◽  
pp. 371-375 ◽  
Author(s):  
A. Chawanda ◽  
K.T. Roro ◽  
F.D. Auret ◽  
W. Mtangi ◽  
C. Nyamhere ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Diodes

Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes

2007 ◽  
Vol 253 (18) ◽  
pp. 7467-7470 ◽  
Author(s):  
H. Doğan ◽  
H. Korkut ◽  
N. Yıldırım ◽  
A. Turut
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Diodes
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