scholarly journals Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

2015 ◽  
Vol 107 (8) ◽  
pp. 083301 ◽  
Author(s):  
Martin Held ◽  
Stefan P. Schießl ◽  
Dominik Miehler ◽  
Florentina Gannott ◽  
Jana Zaumseil
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Solution Processed ◽  
Polymer Metal

Low-Voltage Organic Field-Effect Transistors (OFETs) with Solution-Processed Metal-Oxide as Gate Dielectric

2011 ◽  
Vol 3 (12) ◽  
pp. 4662-4667 ◽  
Author(s):  
Yaorong Su ◽  
Chengliang Wang ◽  
Weiguang Xie ◽  
Fangyan Xie ◽  
Jian Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

Mixed self-assembled monolayer gate dielectrics for low-voltage solution-processed polymer field-effect transistors

2015 ◽  
Vol 3 (6) ◽  
pp. 1181-1186 ◽  
Author(s):  
T. V. A. G. de Oliveira ◽  
A. Eleta ◽  
L. E. Hueso ◽  
A. M. Bittner
Keyword(s):  
Carboxylic Acid ◽  
Phosphonic Acid ◽  
Field Effect ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Carboxylic Acid Groups ◽  
Self Assembled

Highly insulating gate dielectrics based on AlOx and on mixed phosphonic-acid SAMs terminated with methyl/carboxylic acid groups are demonstrated.

Solution-Processed High Mobility Top-Gate N-Channel Polymer Field-Effect Transistors

2015 ◽  
Vol 32 (9) ◽  
pp. 098501
Author(s):  
Lan-Yi Xiang ◽  
Jun Ying ◽  
Jin-Hua Han ◽  
Wei Wang ◽  
Wen-Fa Xie
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Solution Processed

Reduced-temperature solution-processed transparent oxide low-voltage-operable field-effect transistors

2015 ◽  
Vol 5 (4) ◽  
pp. 605-611 ◽  
Author(s):  
Yu Liu ◽  
Kyle McElhinny ◽  
Olivia Alley ◽  
Paul G. Evans ◽  
Howard E. Katz
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Temperature Solution ◽  
Transparent Oxide ◽  
Image Position ◽  
Reduced Temperature

Abstract

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