Electron/hole velocity overshoot in sub-100-nm Si metal-oxide-semiconductor field-effect transistors and its application to low-voltage operation

1998 ◽  
Author(s):  
Tomohisa Mizuno
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electron Hole ◽  
Velocity Overshoot ◽  
Low Voltage Operation

Improved hetero-junction TFET-based Schmitt trigger designs for ultra-low-voltage VLSI applications

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Abhay Sanjay Vidhyadharan ◽  
Sanjay Vidhyadharan
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Low Voltage ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Schmitt Trigger ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Power Requirement ◽  
Content Type

Purpose Tunnel field effect transistors (TFETs) have significantly steeper sub-threshold slope (24–30 mv/decade), as compared with the conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), which have a sub-threshold slope of 60 mv/decade at room temperature. The steep sub-threshold slope of TFETs enables a much faster switching, making TFETs a better option than MOSFETs for low-voltage VLSI applications. The purpose of this paper is to present a novel hetero-junction TFET-based Schmitt triggers, which outperform the conventional complementary metal oxide semiconductor (CMOS) Schmitt triggers at low power supply voltage levels. Design/methodology/approach The conventional Schmitt trigger has been implemented with both MOSFETs and HTFETs for operation at a low-voltage level of 0.4 V and a target hysteresis width of 100 mV. Simulation results have indicated that the HTFET-based Schmitt trigger not only has significantly lower delays but also consumes lesser power as compared to the CMOS-based Schmitt trigger. The limitations of the conventional Schmitt trigger design have been analysed, and improved CMOS and CMOS–HTFET hybrid Schmitt trigger designs have been presented. Findings The conventional Schmitt trigger implemented with HTFETs has 99.9% lower propagation delay (29ps) and 41.2% lesser power requirement (4.7 nW) than the analogous CMOS Schmitt trigger, which has a delay of 36 ns and consumes 8 nW of power. An improved Schmitt trigger design has been proposed which has a transistor count of only six as compared to the eight transistors required in the conventional design. The proposed improved Schmitt trigger design, when implemented with only CMOS devices enable a reduction of power delay product (PDP) by 98.4% with respect to the CMOS conventional Schmitt trigger design. The proposed CMOS–HTFET hybrid Schmitt trigger further helps in decreasing the delay of the improved CMOS-only Schmitt trigger by 70% and PDP by 21%. Originality/value The unique advantage of very steep sub-threshold slope of HTFETs has been used to improve the performance of the conventional Schmitt trigger circuit. Novel CMOS-only and CMOS–HTFET hybrid improved Schmitt trigger designs have been proposed which requires lesser number of transistors (saving 70% chip area) for implementation and has significantly lower delays and power requirement than the conventional designs.

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