Donor-acceptor pair recombination luminescence from monoclinic Cu2SnS3 thin film

2015 ◽  
Vol 107 (3) ◽  
pp. 032101 ◽  
Author(s):  
Naoya Aihara ◽  
Kunihiko Tanaka ◽  
Hisao Uchiki ◽  
Ayaka Kanai ◽  
Hideaki Araki
Keyword(s):  
Thin Film ◽  
Acceptor Pair ◽  
Recombination Luminescence ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Donor-acceptor pair recombination luminescence from Cu2ZnSnS4bulk single crystals

2006 ◽  
Vol 203 (11) ◽  
pp. 2891-2896 ◽  
Author(s):  
K. Tanaka ◽  
Y. Miyamoto ◽  
H. Uchiki ◽  
K. Nakazawa ◽  
H. Araki
Keyword(s):  
Single Crystals ◽  
Acceptor Pair ◽  
Recombination Luminescence ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Sharp-line, donor–acceptor pair recombination luminescence in Si(In,Li), Si(Ga,Li), Si(Al,Li), and Si(B,Li)

1982 ◽  
Vol 60 (7) ◽  
pp. 1041-1052 ◽  
Author(s):  
U. O. Ziemelis ◽  
M. L. W. Thewalt ◽  
R. R. Parsons
Keyword(s):  
Luminescence Line ◽  
Acceptor Pair ◽  
Sharp Line ◽  
Recombination Luminescence ◽  
Line Structure ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

The observation of sharp-line, donor–acceptor pair recombination luminescence in Si following the diffusion of the donor Li into samples previously doped with the acceptors B, Al, Ga, or In is reported. Shell assignments have been made for most of the numerous new photoluminescence lines. These assignments indicate that the principal donor introduced into the samples was the Li–O complex, and that the principal acceptor in the In-doped samples was the In–X centre. Results for the Al- and Ga-doped samples are consistent with ordinary Al and Ga acceptors, while those for B are inconclusive due to the extreme weakness of the sharp-line structure. This study not only confirms that donor–acceptor pair recombination in Si can give rise to sharp luminescence line series, but shows that this process is quite widespread, given the proper concentrations of donors and acceptors.

Time-resolved donor-acceptor pair recombination luminescence in highly n- and p-doped II–VI semiconductors

1994 ◽  
Vol 138 (1-4) ◽  
pp. 815-819 ◽  
Author(s):  
Ch. Friske ◽  
R. Heitz ◽  
B. Lummer ◽  
V. Kutzer ◽  
A. Hoffmann ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Recombination Luminescence ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials
Sign in / Sign up

Export Citation Format

Share Document