Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

2015 ◽  
Vol 117 (24) ◽  
pp. 245304 ◽  
Author(s):  
M. Broas ◽  
X. Liu ◽  
Y. Ge ◽  
T. T. Mattila ◽  
M. Paulasto-Kröckel
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Galvanic Corrosion ◽  
Microelectromechanical Devices

Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

1998 ◽  
Vol 546 ◽  
Author(s):  
V. Ziebartl ◽  
O. Paul ◽  
H. Baltes
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
Excellent Agreement ◽  
Energy Minimization ◽  
Coefficient Of Thermal Expansion ◽  
Temperature Dependent ◽  
Minimization Method ◽  
Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

2010 ◽  
Vol 518 (14) ◽  
pp. 3891-3893 ◽  
Author(s):  
J.C. Alonso ◽  
F.A. Pulgarín ◽  
B.M. Monroy ◽  
A. Benami ◽  
M. Bizarro ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Nanoclusters

In situ IR observation of photo-chemically deposited silicon nitride thin films

1991 ◽  
Vol 48-49 ◽  
pp. 409-413 ◽  
Author(s):  
T. Wadayama ◽  
T. Hihara ◽  
A. Hatta ◽  
W. Suëtaka
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
In Situ Ir

Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

2014 ◽  
Vol 116 (4) ◽  
pp. 043506 ◽  
Author(s):  
F. Volpi ◽  
M. Braccini ◽  
A. Devos ◽  
G. Raymond ◽  
A. Pasturel ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Mechanical Behaviour ◽  
Stressed Silicon

Characterization of Silicon Nitride Thin Films on Si and Overlayer Growth of Si and Ge

2001 ◽  
Vol 40 (Part 1, No. 6B) ◽  
pp. 4292-4298 ◽  
Author(s):  
Xue-Sen Wang ◽  
Zongquan Li ◽  
Lei Wang ◽  
Yanfang Hu ◽  
Guangjie Zhai ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Silicon Nitride Thin Films from SiCl[sub 4] Plus NH[sub 3]: Preparation and Properties

1968 ◽  
Vol 115 (5) ◽  
pp. 525 ◽  
Author(s):  
M. J. Grieco ◽  
F. L. Worthing ◽  
B. Schwartz
Keyword(s):  
Thin Films ◽  
Silicon Nitride

The Interfacial Diffusion Zone in Magnetron Sputtered Ni-Ti Thin Films Deposited on Different Si Substrates Studied by HR-TEM

2008 ◽  
Vol 587-588 ◽  
pp. 820-823 ◽  
Author(s):  
Rui M.S. Martins ◽  
Manfred Beckers ◽  
A. Mücklich ◽  
Norbert Schell ◽  
Rui Jorge C. Silva ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Front ◽  
Interfacial Structure ◽  
Interfacial Diffusion ◽  
Tem Analysis ◽  
Si Substrates ◽  
Microelectromechanical Devices ◽  
Preferential Diffusion ◽  
High Resolution Tem ◽  
Columnar Grains

Ni-Ti Shape Memory Alloy thin films are suitable materials for microelectromechanical devices. During the deposition of Ni-Ti thin films on Si substrates, there exist interfacial diffusion and chemical interactions at the interface due to the high temperature processing necessary to crystallize the film. For the present study, Ni-Ti thin films were prepared by magnetron cosputtering from Ni-Ti and Ti targets in a specially designed chamber mounted on the 6-circle goniometer of the ROssendorf BeamLine (ROBL-CRG) at ESRF, Grenoble (France). The objective of this study has been to investigate the interfacial structure resulting from depositions (at a temperature of ≈ 470°C) on different substrates: naturally oxidized Si(100), Si(111) and poly-Si substrates. A detailed High-Resolution TEM analysis of the interfacial structure has been performed. When Ni-Ti is deposited on Si(100) substrate, a considerable diffusion of Ni into the substrate takes place, resulting in the growth of semi-octaeder A-NiSi2 silicide. In the case of Ni-Ti deposited on Si(111), there appears an uniform thickness plate, due to the alignment between substrate orientation and the [111]-growth front. For Ni-Ti deposited on poly-Si, the diffusion is inhomogeneous. Preferential diffusion is found along the columnar grains of poly-Si, which are favourably aligned for Ni diffusion. These results show that for the Ni-Ti/Si system, the morphology of the diffusion interface is strongly dependent on the type of substrates.

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