Electrical properties of single CuO nanowires for device fabrication: Diodes and field effect transistors

2015 ◽  
Vol 106 (22) ◽  
pp. 223501 ◽  
Author(s):  
Camelia Florica ◽  
Andreea Costas ◽  
Andra Georgia Boni ◽  
Raluca Negrea ◽  
Lucian Ion ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Device Fabrication ◽  
Cuo Nanowires

scholarly journals Experimental and molecular dynamics studies of an ultra-fast sequential hydrogen plasma process for fabricating phosphorene-based sensors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Rajabali ◽  
H. Asgharyan ◽  
V. Fadaei Naeini ◽  
A. Boudaghi ◽  
B. Zabihi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Dynamics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hydrogen Plasma ◽  
Device Fabrication ◽  
Dynamics Simulation ◽  
Red Phosphorus ◽  
Large Area ◽  
Low Concentration

AbstractLow concentration phosphorene-based sensors have been fabricated using a facile and ultra-fast process which is based on an exfoliation-free sequential hydrogen plasma treatment to convert the amorphous phosphorus thin film into mono- or few-layered phosphorene sheets. These sheets have been realized directly on silicon substrates followed by the fabrication of field-effect transistors showing the low leakage current and reasonable mobility for the nano-sensors. Being capable of covering the whole surface of the silicon substrate, red phosphorus (RP) coated substrate has been employed to achieve large area phosphorene sheets. Unlike the available techniques including mechanical exfoliation, there is no need for any exfoliation and/or transfer step which is significant progress in shortening the device fabrication procedure. These phosphorene sheets have been examined using transmission electron microscopy (TEM), Scanning electron microscopy (SEM), Raman spectroscopy and atomic-force microscopy (AFM). Electrical output in different states of the crystallization as well as its correlation with the test parameters have been also extensively used to examine the evolution of the phosphorene sheets. By utilizing the fabricated devices, the sensitivity of the phosphorene based-field effect transistors to the soluble L-Cysteine in low concentrations has been studied by measuring the FET response to the different concentrations. At a gate voltage of − 2.5 V, the range of 0.07 to 0.60 mg/ml of the L-Cysteine has been distinguishably detected presenting a gate-controlled sensor for a low-concentration solution. A reactive molecular dynamics simulation has been also performed to track the details of this plasma-based crystallization. The obtained results showed that the imparted energy from hydrogen plasma resulted in a phase transition from a system containing red phosphorus atoms to the crystal one. Interestingly and according to the simulation results, there is a directional preference of crystal growth as the crystalline domains are being formed and RP atoms are more likely to re-locate in armchair than in zigzag direction.

Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

2018 ◽  
Vol 113 (6) ◽  
pp. 062103 ◽  
Author(s):  
Tae-Eon Bae ◽  
Kimihiko Kato ◽  
Ryota Suzuki ◽  
Ryosho Nakane ◽  
Mitsuru Takenaka ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Impurity Concentration ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Field Effect Transistors

Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors

2019 ◽  
Vol 481 ◽  
pp. 632-636 ◽  
Author(s):  
Yu Yang ◽  
Jiayan Yang ◽  
Wenlei Yin ◽  
Fanming Huang ◽  
Anyang Cui ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Time ◽  
Field Effect ◽  
Field Effect Transistors ◽  
P Type

Influence of solvent additives on the morphology and electrical properties of diF-TES ADT organic field-effect transistors

2019 ◽  
Vol 68 ◽  
pp. 205-211 ◽  
Author(s):  
Carla Patricia Lacerda Rubinger ◽  
Hamna F. Haneef ◽  
Corey Hewitt ◽  
David Carroll ◽  
John E. Anthony ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Influence Of Solvent

scholarly journals Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1804 ◽  
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxygen Plasma Treatment ◽  
Calcination Process ◽  
Microwave Annealing ◽  
High K

We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.

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