The role of contact resistance in GeTe and Ge2Sb2Te5 nanowire phase change memory reset switching current

2015 ◽  
Vol 106 (19) ◽  
pp. 193106 ◽  
Author(s):  
Inchan Hwang ◽  
Yong-Jun Cho ◽  
Myoung-Jae Lee ◽  
Moon-Ho Jo
Keyword(s):  
Contact Resistance ◽  
Phase Change ◽  
Phase Change Memory ◽  
Switching Current ◽  
Change Memory

Role of the nano amorphous interface in the crystallization of Sb2Te3 towards non-volatile phase change memory: insights from first principles

2014 ◽  
Vol 16 (22) ◽  
pp. 10810 ◽  
Author(s):  
Xue-Peng Wang ◽  
Nian-Ke Chen ◽  
Xian-Bin Li ◽  
Yan Cheng ◽  
X. Q. Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
First Principles ◽  
Phase Change Memory ◽  
Volatile Phase ◽  
Change Memory

scholarly journals Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing

2019 ◽  
Vol 114 (13) ◽  
pp. 132102 ◽  
Author(s):  
Yuta Saito ◽  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
...  
Keyword(s):  
Phase Change ◽  
Crucial Role ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory

scholarly journals A contact resistance model for scanning probe phase-change memory

2014 ◽  
Vol 24 (3) ◽  
pp. 037001 ◽  
Author(s):  
Lei Wang ◽  
David Wright ◽  
Mustafa Aziz ◽  
Jin Ying ◽  
Guo Wei Yang
Keyword(s):  
Contact Resistance ◽  
Phase Change ◽  
Phase Change Memory ◽  
Scanning Probe ◽  
Resistance Model ◽  
Change Memory

Role of electronic excitation in phase-change memory materials: A brief review

2012 ◽  
Vol 249 (10) ◽  
pp. 1861-1866 ◽  
Author(s):  
X.-B. Li ◽  
X. Q. Liu ◽  
X. D. Han ◽  
S. B. Zhang
Keyword(s):  
Phase Change ◽  
Electronic Excitation ◽  
Phase Change Memory ◽  
Change Memory

Investigation of SET and RESET States Resistance in Ohmic Regime for Phase-Change Memory

2008 ◽  
Vol 1072 ◽  
Author(s):  
Semyon D. Savransky ◽  
Ilya V Karpov
Keyword(s):  
Electrical Properties ◽  
Contact Resistance ◽  
Phase Change ◽  
Phase Change Memory ◽  
Activation Energies ◽  
New Technique ◽  
Specific Contact Resistance ◽  
Bulk Conductivity ◽  
Specific Contact ◽  
Change Memory

ABSTRACTNew technique to separate bulk and interface electrical properties of polycrystalline and glassy Ge2Sb2Te5 (GST) in phase-change memory (PCM) devices is proposed. PCM with different GST thicknesses are measured. The average activation energies for bulk conductivity are 0.37 eV and 0.09 eV as well as bulk resistivities are about μOhm*cm2 and 20 μOhm*cm. The contact barriers is 0.07eV and specific contact resistance is about 0.3 μOhm*cm2 in studied PCM devices.It is discovered that bulk resistivities for both SET and RESET states in PCM obey Meyer-Neldel rule with almost identical isokinetic temperatures 335K − 340K. This information is discussed in terms of GST structure.

The Role of Interfaces in Damascene Phase-Change Memory

2007 ◽  
Author(s):  
David L. Kencke ◽  
Ilya V. Karpov ◽  
Brian G. Johnson ◽  
Sean Jong Lee ◽  
DerChang Kau ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi₂Te₃ Thermoelectric Interfacial Layer

2020 ◽  
Vol 41 (11) ◽  
pp. 1657-1660
Author(s):  
Asir Intisar Khan ◽  
Heungdong Kwon ◽  
Raisul Islam ◽  
Christopher Perez ◽  
Michelle E. Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Current Density ◽  
Interfacial Layer ◽  
Phase Change Memory ◽  
Switching Current ◽  
Fold Reduction ◽  
Change Memory

Operation Dynamics in Phase-Change Memory Cells and the Role of Access Devices

2012 ◽  
Author(s):  
A. Faraclas ◽  
N. Williams ◽  
F. Dirisaglik ◽  
K. Cil ◽  
A. Gokirmak ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory
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