Role of the nano amorphous interface in the crystallization of Sb2Te3 towards non-volatile phase change memory: insights from first principles

2014 ◽  
Vol 16 (22) ◽  
pp. 10810 ◽  
Author(s):  
Xue-Peng Wang ◽  
Nian-Ke Chen ◽  
Xian-Bin Li ◽  
Yan Cheng ◽  
X. Q. Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
First Principles ◽  
Phase Change Memory ◽  
Volatile Phase ◽  
Change Memory

scholarly journals Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing

2019 ◽  
Vol 114 (13) ◽  
pp. 132102 ◽  
Author(s):  
Yuta Saito ◽  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
...  
Keyword(s):  
Phase Change ◽  
Crucial Role ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory

Eutectic Sb7.4Te92.6 thin film for non-volatile phase-change memories

2019 ◽  
Vol 36 (4) ◽  
pp. 171-175
Author(s):  
Claudio Barbon ◽  
Vitaliy Bilovol ◽  
Emiliano Javier Di Liscia ◽  
Bibiana Arcondo
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Content Type ◽  
Current Voltage ◽  
Volatile Phase ◽  
Characteristic Values ◽  
Practical Implications ◽  
Change Memory

Purpose The purpose of this paper is to investigate the structure and electrical properties of eutectic Sb7.4Te92.6 as made thin films to evaluate their potentiality for application to non-volatile phase-change memories. Design/methodology/approach The films were prepared by the pulsed laser deposition technique. The films were characterized by using X-ray diffraction in grazing-incident geometry, differential scanning calorimetry, Raman spectroscopy and transversal current–voltage curves. Findings The memory effect state, characteristic of a typical phase-change memory material, was observed. The temperature of crystallization was about 100ºC. Research limitations/implications Further studies on endurance, scaling and SET/RESET operations are needed. Practical implications One of the main characteristic values, the hold voltage and the threshold voltage values, were about 0.85 and 1.2 V, respectively, in a line with those of Ge2Sb2Te5, GeTe and Sb2Te being considered to date as the main compounds for phase-change memory devices. Originality/value The conduction mechanism in the amorphous regime is highly agreed with the Poole–Frenkel effect in deep traps.

Role of electronic excitation in phase-change memory materials: A brief review

2012 ◽  
Vol 249 (10) ◽  
pp. 1861-1866 ◽  
Author(s):  
X.-B. Li ◽  
X. Q. Liu ◽  
X. D. Han ◽  
S. B. Zhang
Keyword(s):  
Phase Change ◽  
Electronic Excitation ◽  
Phase Change Memory ◽  
Change Memory

The Role of Interfaces in Damascene Phase-Change Memory

2007 ◽  
Author(s):  
David L. Kencke ◽  
Ilya V. Karpov ◽  
Brian G. Johnson ◽  
Sean Jong Lee ◽  
DerChang Kau ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory
Sign in / Sign up

Export Citation Format

Share Document