Role of electronic excitation in phase-change memory materials: A brief review

2012 ◽  
Vol 249 (10) ◽  
pp. 1861-1866 ◽  
Author(s):  
X.-B. Li ◽  
X. Q. Liu ◽  
X. D. Han ◽  
S. B. Zhang
Keyword(s):  
Phase Change ◽  
Electronic Excitation ◽  
Phase Change Memory ◽  
Change Memory

Role of the nano amorphous interface in the crystallization of Sb2Te3 towards non-volatile phase change memory: insights from first principles

2014 ◽  
Vol 16 (22) ◽  
pp. 10810 ◽  
Author(s):  
Xue-Peng Wang ◽  
Nian-Ke Chen ◽  
Xian-Bin Li ◽  
Yan Cheng ◽  
X. Q. Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
First Principles ◽  
Phase Change Memory ◽  
Volatile Phase ◽  
Change Memory

scholarly journals Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing

2019 ◽  
Vol 114 (13) ◽  
pp. 132102 ◽  
Author(s):  
Yuta Saito ◽  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
...  
Keyword(s):  
Phase Change ◽  
Crucial Role ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory

Orbital-selective electronic excitation in phase-change memory materials: a brief review

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Nian-Ke Chen ◽  
Bai-Qian Wang ◽  
Xue-Peng Wang ◽  
Xian-Bin Li
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
Electronic Excitation ◽  
Phase Change Memory ◽  
New Physics ◽  
Heat Diffusion ◽  
Low Power Consumption ◽  
Structural Transitions ◽  
Change Memory

Abstract Ultrafast laser-induced phase/structural transitions show a great potential in optical memory and optical computing technologies, which are believed to have advantages of ultrafast speed, low power consumption, less heat diffusion and remote control as compared with electronic devices. Here, we review and discuss the principles of orbital-selective electronic excitation and its roles in phase/structural transitions of phase-change memory (PCM) materials, including Sc0.2Sb1.8Te3 and GeTe phases. It is demonstrated, that the mechanism can influence the dynamics or results of structural transitions, such as an ultrafast amorphization of Sc0.2Sb1.8Te3 and a non-volatile order-to-order structural transition of GeTe. Without thermal melting, these structural transitions have the advantages of ultrafast speed and low power consumption. It suggests that the orbital-selective electronic excitation can play a significant role in discovering new physics of phase change and shows a potential for new applications.

The Role of Interfaces in Damascene Phase-Change Memory

2007 ◽  
Author(s):  
David L. Kencke ◽  
Ilya V. Karpov ◽  
Brian G. Johnson ◽  
Sean Jong Lee ◽  
DerChang Kau ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

The role of contact resistance in GeTe and Ge2Sb2Te5 nanowire phase change memory reset switching current

2015 ◽  
Vol 106 (19) ◽  
pp. 193106 ◽  
Author(s):  
Inchan Hwang ◽  
Yong-Jun Cho ◽  
Myoung-Jae Lee ◽  
Moon-Ho Jo
Keyword(s):  
Contact Resistance ◽  
Phase Change ◽  
Phase Change Memory ◽  
Switching Current ◽  
Change Memory

Operation Dynamics in Phase-Change Memory Cells and the Role of Access Devices

2012 ◽  
Author(s):  
A. Faraclas ◽  
N. Williams ◽  
F. Dirisaglik ◽  
K. Cil ◽  
A. Gokirmak ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Insight into the role of W in amorphous GeTe for phase-change memory

2018 ◽  
Vol 738 ◽  
pp. 270-276 ◽  
Author(s):  
Linchuan Zhang ◽  
Naihua Miao ◽  
Jian Zhou ◽  
Jinxiao Mi ◽  
Zhimei Sun
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Insight Into ◽  
Change Memory
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