Amorphization of Garnet by Ion Implantation

1983 ◽  
Vol 27 ◽  
Author(s):  
A. M. Guzman ◽  
T. Yoshiie ◽  
C. L. Bauer ◽  
M. H. Kryder
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Liquid Phase ◽  
Ion Implantation ◽  
Liquid Phase Epitaxy ◽  
Atomic Displacement ◽  
Transmission Electron ◽  
Continuous Band ◽  
Subsequent Propagation

ABSTRACTAmorphization by ion implantation has been investigated in films of (SmYGdTm)3Ga0.4Fe4.6O12 garnet by transmission electron microscopy, incorporating a special cross-sectioning technique. These films were produced by liquid phase epitaxy on (111) garnet substrates and subsequently implanted with ions of deuterium at 60 keV and doses ranging from 0.50 to 4.5×1016 D2+/cm2 and ions of oxygen at 110 keV and doses ranging from 0.95 to 8.6×1014O+/cm2. The amorphization process proceeds in separate stages involving the formation of isolated amorphous regions, merging of these regions into a continuous band and subsequent propagation of the amorphous band toward the implanted surface. Details of these processes are interpreted in terms of various atomic displacement mechanisms.

Evaluation of the Interface Structure During Stranski-Krastanov Growth of GE(SI) on Si (001)

1991 ◽  
Vol 238 ◽  
Author(s):  
M. Albrecht ◽  
H. P. Strunk ◽  
P. O. Hansson ◽  
E. Bauser
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Interface Structure ◽  
Misfit Dislocations ◽  
Heteroepitaxial Growth ◽  
Dislocation Glide ◽  
Transmission Electron ◽  
Half Loop

ABSTRACTThe initial stages of heteroepitaxial growth of Ge0.85 Si0.15 on Si(001) grown from Bi solution (liquid phase epitaxy) are studid by transmission electron microscopy. Stranski-Krastanov growth is observed to take place. After growth of a pseudomorphic Ge0.85 Si0.15 layer of 4 monolayer thickness, islands form and grow pseudomorphically up to a thickness of 30 nm. Then first misfit dislocations form. The formation process of these dislocations is analyzed and discussed in terms of half loop nucleation at the surface and dislocation glide. Evidence for glide on (110) planes is put forward.

scholarly journals Thermal Annealing of High Dose P Implantation in 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Epitaxial Layer ◽  
Point Defects ◽  
High Dose ◽  
Double Step ◽  
Post Annealing ◽  
Transmission Electron

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

Electron-beam-driven chemical processes during liquid phase transmission electron microscopy

MRS Bulletin ◽  
2020 ◽  
Vol 45 (9) ◽  
pp. 746-753
Author(s):  
Taylor J. Woehl ◽  
Trevor Moser ◽  
James E. Evans ◽  
Frances M. Ross
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Liquid Phase ◽  
Chemical Processes ◽  
Transmission Electron ◽  
Phase Transmission ◽  
Image Position

Abstract

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