Mechanical characterization between room temperature and 1000 °C of SiC free-standing thin films by a novel high-temperature micro-tensile setup

2015 ◽  
Vol 86 (5) ◽  
pp. 055104 ◽  
Author(s):  
D. Leisen ◽  
R. Rusanov ◽  
F. Rohlfing ◽  
T. Fuchs ◽  
C. Eberl ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Room Temperature ◽  
Mechanical Characterization ◽  
Free Standing

Fabrication and Mechanical Characterization of Semi-Free-Standing (Conjugated) Polymer Thin Films

Langmuir ◽  
2013 ◽  
Vol 30 (18) ◽  
pp. 5217-5223 ◽  
Author(s):  
Jaime Martín ◽  
Miguel Muñoz ◽  
Mario Encinar ◽  
Montserrat Calleja ◽  
Marisol Martín-González
Keyword(s):  
Thin Films ◽  
Conjugated Polymer ◽  
Mechanical Characterization ◽  
Polymer Thin Films ◽  
Free Standing

scholarly journals Influence of bath temperature on microstructure and NH3 sensing properties of chemically synthesized CdO thin films

2019 ◽  
Vol 37 (1) ◽  
pp. 25-32
Author(s):  
A.K. Sharma ◽  
S.S. Potdar ◽  
M.A. Yewale ◽  
Deepak B. Shirgaonkar ◽  
K.S. Pakhare ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
High Temperature ◽  
Band Gap ◽  
Room Temperature ◽  
Nitrate Solution ◽  
Cadmium Nitrate ◽  
Monoclinic Crystal ◽  
Cdo Thin Films ◽  
Deposited Films

AbstractCadmium oxide (CdO) thin films were synthesized using chemical bath deposition (CBD) method from aqueous cadmium nitrate solution. The bath temperatures were maintained at room temperature (25 °C) and at higher temperature (80 °C). The structural studies revealed that the films showed mixed phases of CdO and Cd(OH)2 with hexagonal/monoclinic crystal structure. Annealing treatment removed the hydroxide phase and the films converted into pure CdO with cubic, face centered crystal structure. SEM micrographs of as-deposited films revealed nanowire-like morphology for room temperature deposited films while nanorod-like morphology for high temperature deposited films. However, cube-like morphology was observed after air annealing. Elemental composition was confirmed by EDAX analysis. Band gap energies of the as-deposited films varied over the range of 3 eV to 3.5 eV, whereas the annealed films showed band gap energy variation in the range of 2.2 eV to 2.4 eV. The annealed films were successfully investigated for NH3 sensing at different operating temperatures and at different gas concentrations. The room temperature synthesized film showed a response of 17.3 %, whereas high temperature synthesized film showed a response of 13.5 % at 623 K upon exposure to 24 ppm of NH3.

High-temperature bulge-test setup for mechanical testing of free-standing thin films

2003 ◽  
Vol 74 (3) ◽  
pp. 1383-1385 ◽  
Author(s):  
A. J. Kalkman ◽  
A. H. Verbruggen ◽  
G. C. A. M. Janssen
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Mechanical Testing ◽  
Bulge Test ◽  
Free Standing ◽  
Test Setup

Characterization of pulsed laser deposited Zno-WS2 thin solid film lubricants

1995 ◽  
Vol 53 ◽  
pp. 558-559
Author(s):  
S. D. Walck ◽  
J. S. Zabinski ◽  
N.T. McDevitt ◽  
J. E. Bultman
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Low Temperatures ◽  
Wear Debris ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Changes ◽  
Aerospace Applications ◽  
Solid Film

ZnO-WS2 is a potential high temperature solid film lubricant for aerospace applications that exhibits adaptive lubricant behavior. An adaptive lubricant undergoes phase and/or chemical changes in response to thermal, environmental, and tribological conditions; with the resulting phase or wear debris also being lubricious. Pulsed laser deposited (PLD) ZnO-WS2 thin films deposited at room temperature (RT) and wear-tested at room temperature have been shown to have coefficients of friction of 0.04 or less which are comparable to WS2 films, but have much longer wear lives. In the as-deposited state, PLD ZnO-WS2 films are amorphous, but when wear-tested, the phases WS2, WO3, and ZnWO4 are produced. Of these, WS2 is a lubricant phase at low temperatures (⪯ ~450°C) while ZnWO4 is a lubricant phase above about 600°C. The purpose of this work was to characterize the microstructural and chemical changes that occur when the RT-PLD ZnO-WS2 films are heated in air.The RT-PLD ZnO-WS2 films were deposited in a system having a base pressure of 9×l0-7 Pa with a typical pressure during deposition of 6×10-5 Pa.

Hillock Formation in Tensile Loaded Films

1995 ◽  
Vol 391 ◽  
Author(s):  
Karen E. Harris ◽  
Alexander H. King
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Room Temperature ◽  
Large Single Crystal ◽  
Free Standing ◽  
Boundary Area ◽  
Compressive Stresses ◽  
Transmission Electron ◽  
Nominal Thickness ◽  
Hillock Formation

AbstractWhile hillocks usually form to relieve compressive stresses in thin films resulting from electromigration or a difference in thermal expansion in the film and substrate, we have observed hillock formation in tensile-loaded films. We have used transmission electron microscopy to study hillocks which formed in free-standing gold thin films of 25nm nominal thickness. Grain growth during 150°C anneals reduced the grain boundary area and associated free volume, placing the films under tensile stress. While hillock formation could only increase this stress, large single crystal or polycrystalline hillocks with thicknesses up to three times the film thickness are observed after 400°C annealing, after long room temperature anneals, and during TEM observation. These observations suggest the operation of a hillock formation mechanism not explained by any existing hillock formation theories.

High-Temperature Shape Memory Effect in Ti-Ta Thin Films Sputter Deposited at Room Temperature

2014 ◽  
Vol 1 (3) ◽  
pp. 1400019 ◽  
Author(s):  
Y. Motemani ◽  
P. J. S. Buenconsejo ◽  
C. Craciunescu ◽  
A. Ludwig
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Shape Memory ◽  
Shape Memory Effect ◽  
Memory Effect ◽  
Room Temperature ◽  
Sputter Deposited

Piezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVD

2013 ◽  
Vol 740-742 ◽  
pp. 657-660 ◽  
Author(s):  
Oleg Jakovlev ◽  
Tino Fuchs ◽  
Franziska Rohlfing ◽  
Helmut Seidel
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strong Dependence ◽  
Harsh Environment ◽  
Flow Ratio ◽  
Mems Sensors ◽  
Four Point Bending ◽  
Wide Range

We introduce a novel high temperature PECVD process and use it for the deposition of silicon carbide thin films on oxidized silicon wafers at 900°C substrate temperature. A variation of the atomic composition over a wide range is achieved by altering the flow ratio of the precursors silane (SiH4) and acetylene (C2H2). XPS analysis is performed to verify the silicon to carbon ratio in the deposited layers. The resistivity of the obtained thin films shows a strong dependence on the Si/C-ratio. Four point measurements show the resistivity ranging between 5•10-3Ωcm for C-rich layers and >107Ωcm for near stoichiometric layers. We investigate the piezoresistivity of the SiC layers at room temperature under compressive and tensile strain using the four point bending method. The same method is used to analyze selected layers at elevated temperatures up to 600°C. Based on the results we evaluate the applicability of the obtained thin films for strain transducing in harsh environment MEMS sensors.

Determining the High-temperature Properties of Thin Films Using Bilayered Cantilevers

1998 ◽  
Vol 546 ◽  
Author(s):  
H. Tada ◽  
P. Nieva ◽  
P. Zavracky ◽  
I.N. Miaoulis ◽  
P.Y. Wong
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
High Temperature ◽  
Thermal Expansion Coefficient ◽  
High Temperatures ◽  
Expansion Coefficient ◽  
Room Temperature ◽  
Temperature Property ◽  
Beam Curvature ◽  
High Temperature Property

AbstractHigh-temperature applications of microelectromechanical systems (MEMS), especially in new temperature sensor designs, require an accurate knowledge of the temperature-dependent thermophysical properties of the materials. Although the measurement of the mechanical properties of materials at room temperature has been widely conducted, the same techniques often cannot be used for high-temperature property measurements. In this study, a new technique was developed to find the thermal expansion coefficient of thin films at high temperatures. Bilayered cantilever beams undergo thermally induced deflection at high temperatures, which can be measured and correlated to material properties. An imaging system was developed for the experimental measurement of the beam curvature for temperatures up to 1000°C. To find the high-temperature property of thin films, a bilayered beam, consisting of polycrystalline silicon and silicon dioxide, was designed such that the change in the property of SiO2 had little effect on the curvature of the beam. Furthermore, numerical analysis showed that the Young's modulus of Si also had negligible effect on the curvature. Therefore, the analytical model for beam curvature was simplified to be only a function of the thermal expansion coefficient of Si layer. Using this model, the thermal expansion coefficient of polycrystalline Si film was determined for temperature range between room temperature and 1000°C. The method can be easily modified to find the Young's modulus of Si, as well as properties of SiO2.

scholarly journals Synthesis of ReN3 Thin Films by Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
G. Soto ◽  
H. Tiznado ◽  
W. de la Cruz ◽  
A. Reyes
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Density Functional Calculations ◽  
Density Functional ◽  
Room Temperature ◽  
Reactive Magnetron ◽  
Orthorhombic Space Group ◽  
High Pressure High Temperature

In this work ReNx films were prepared by reactive magnetron sputtering at room temperature and deposited on a silicon wafer. It was found that the diffractograms of the nitrogen-rich rhenium film are consistent with those produced by high-pressure high-temperature methods, under the assumption that the film is oriented on the substrate. Using density functional calculations it was found that the composition of this compound could be ReN3, instead of ReN2, as stated on previous works. The ReN3 compound fits in the Ama2 (40) orthorhombic space group, and due to the existence of N3 anions between Re layers it should be categorized as an azide. The material is exceptionally brittle and inherently unstable under indentation testing.

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