ChemInform Abstract: Induction of High-Temperature Superconductivity in Pulsed Laser Ablated La2CuO4 Thin Films by Room Temperature Chemical Oxidation.

ChemInform ◽  
2010 ◽  
Vol 28 (44) ◽  
pp. no-no
Author(s):  
S. T. LEES ◽  
P. P. EDWARDS ◽  
I. GAMESON ◽  
M. O. JONES ◽  
M. SLASKI ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Room Temperature ◽  
High Temperature Superconductivity ◽  
Pulsed Laser ◽  
Chemical Oxidation

Induction of high-temperature superconductivity in pulsed laser ablated La2CuO4thin films by room temperature chemical oxidation

1997 ◽  
Vol 9 (10) ◽  
pp. 823-826 ◽  
Author(s):  
Simon T. Lees ◽  
Peter P. Edwards ◽  
Ian Gameson ◽  
Martin O. Jones ◽  
Marcin Slaski ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
High Temperature Superconductivity ◽  
Pulsed Laser ◽  
Chemical Oxidation

Characterization of pulsed laser deposited Zno-WS2 thin solid film lubricants

1995 ◽  
Vol 53 ◽  
pp. 558-559
Author(s):  
S. D. Walck ◽  
J. S. Zabinski ◽  
N.T. McDevitt ◽  
J. E. Bultman
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Low Temperatures ◽  
Wear Debris ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Changes ◽  
Aerospace Applications ◽  
Solid Film

ZnO-WS2 is a potential high temperature solid film lubricant for aerospace applications that exhibits adaptive lubricant behavior. An adaptive lubricant undergoes phase and/or chemical changes in response to thermal, environmental, and tribological conditions; with the resulting phase or wear debris also being lubricious. Pulsed laser deposited (PLD) ZnO-WS2 thin films deposited at room temperature (RT) and wear-tested at room temperature have been shown to have coefficients of friction of 0.04 or less which are comparable to WS2 films, but have much longer wear lives. In the as-deposited state, PLD ZnO-WS2 films are amorphous, but when wear-tested, the phases WS2, WO3, and ZnWO4 are produced. Of these, WS2 is a lubricant phase at low temperatures (⪯ ~450°C) while ZnWO4 is a lubricant phase above about 600°C. The purpose of this work was to characterize the microstructural and chemical changes that occur when the RT-PLD ZnO-WS2 films are heated in air.The RT-PLD ZnO-WS2 films were deposited in a system having a base pressure of 9×l0-7 Pa with a typical pressure during deposition of 6×10-5 Pa.

TEM sample preparation of wear-tested room-temperature pulsed-laser-deposited thin films of MoS2 by ultramicrotomy

1993 ◽  
Vol 51 ◽  
pp. 1118-1119
Author(s):  
Pamela F. Lloyd ◽  
Scott D. Walck
Keyword(s):  
Thin Films ◽  
Sample Preparation ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Wear Testing ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Aerospace Applications

Pulsed laser deposition (PLD) is a novel technique for the deposition of tribological thin films. MoS2 is the archetypical solid lubricant material for aerospace applications. It provides a low coefficient of friction from cryogenic temperatures to about 350°C and can be used in ultra high vacuum environments. The TEM is ideally suited for studying the microstructural and tribo-chemical changes that occur during wear. The normal cross sectional TEM sample preparation method does not work well because the material’s lubricity causes the sandwich to separate. Walck et al. deposited MoS2 through a mesh mask which gave suitable results for as-deposited films, but the discontinuous nature of the film is unsuitable for wear-testing. To investigate wear-tested, room temperature (RT) PLD MoS2 films, the sample preparation technique of Heuer and Howitt was adapted.Two 300 run thick films were deposited on single crystal NaCl substrates. One was wear-tested on a ball-on-disk tribometer using a 30 gm load at 150 rpm for one minute, and subsequently coated with a heavy layer of evaporated gold.

scholarly journals Room-temperature oxygen vacancy migration induced reversible phase transformation during the anelastic deformation in CuO

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Lei Li ◽  
Guoxujia Chen ◽  
He Zheng ◽  
Weiwei Meng ◽  
Shuangfeng Jia ◽  
...  
Keyword(s):  
High Temperature ◽  
Oxygen Vacancy ◽  
Room Temperature ◽  
High Temperature Superconductivity ◽  
Experimental Investigations ◽  
Solid State Chemistry ◽  
Vacancy Migration ◽  
Scientific Disciplines ◽  
Anelastic Deformation ◽  
Reversible Phase

AbstractFrom the mechanical perspectives, the influence of point defects is generally considered at high temperature, especially when the creep deformation dominates. Here, we show the stress-induced reversible oxygen vacancy migration in CuO nanowires at room temperature, causing the unanticipated anelastic deformation. The anelastic strain is associated with the nucleation of oxygen-deficient CuOx phase, which gradually transforms back to CuO after stress releasing, leading to the gradual recovery of the nanowire shape. Detailed analysis reveals an oxygen deficient metastable CuOx phase that has been overlooked in the literatures. Both theoretical and experimental investigations faithfully predict the oxygen vacancy diffusion pathways in CuO. Our finding facilitates a better understanding of the complicated mechanical behaviors in materials, which could also be relevant across multiple scientific disciplines, such as high-temperature superconductivity and solid-state chemistry in Cu-O compounds, etc.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Room-temperature ferromagnetism in (Ga, Mn)N thin films grown by pulsed laser deposition

2004 ◽  
Vol 36 (4-6) ◽  
pp. 403-408 ◽  
Author(s):  
D. O’Mahony ◽  
F. McGee ◽  
M. Venkatesan ◽  
J.G. Lunney ◽  
J.M.D. Coey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Pulsed Laser ◽  
Laser Deposition

Influence of Momentary Annealing on the Nanoscale Surface Morphology of Room Temperature Pulsed Laser Deposited NiO(111) Epitaxial Thin Films on Atomically Stepped Sapphire (0001) Substrates

2013 ◽  
Vol 1507 ◽  
Author(s):  
Ryosuke Yamauchi ◽  
Geng Tan ◽  
Daishi Shiojiri ◽  
Nobuo Tsuchimine ◽  
Koji Koyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Film Surface ◽  
Transient State ◽  
Epitaxial Thin Films ◽  
Flat Surfaces ◽  
Surface Nanostructure ◽  
Atomically Flat

ABSTRACTWe examined the influence of momentary annealing on the nanoscale surface morphology of NiO(111) epitaxial thin films deposited on atomically stepped sapphire (0001) substrates at room temperature in O2 at 1.3 × 10−3 and 1.3 × 10−6 Pa using a pulsed laser deposition (PLD) technique. The NiO films have atomically flat surfaces (RMS roughness: approximately 0.1–0.2 nm) reflecting the step-and-terrace structures of the substrates, regardless of the O2 deposition pressure. After rapid thermal annealing (RTA) of the NiO(111) epitaxial film deposited at 1.3 × 10−3 Pa O2, a periodic straight nanogroove array related to the atomic steps of the substrate was formed on the film surface for 60 s. In contrast, the fabrication of a transient state in the nanogroove array formation was achieved with RTA of less than 1 s. However, when the O2 atmosphere during PLD was 1.3 × 10−6 Pa, random crystal growth was observed and resulted in a disordered rough surface nanostructure after RTA.

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

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