Hillock Formation in Tensile Loaded Films

1995 ◽  
Vol 391 ◽  
Author(s):  
Karen E. Harris ◽  
Alexander H. King
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Room Temperature ◽  
Large Single Crystal ◽  
Free Standing ◽  
Boundary Area ◽  
Compressive Stresses ◽  
Transmission Electron ◽  
Nominal Thickness ◽  
Hillock Formation

AbstractWhile hillocks usually form to relieve compressive stresses in thin films resulting from electromigration or a difference in thermal expansion in the film and substrate, we have observed hillock formation in tensile-loaded films. We have used transmission electron microscopy to study hillocks which formed in free-standing gold thin films of 25nm nominal thickness. Grain growth during 150°C anneals reduced the grain boundary area and associated free volume, placing the films under tensile stress. While hillock formation could only increase this stress, large single crystal or polycrystalline hillocks with thicknesses up to three times the film thickness are observed after 400°C annealing, after long room temperature anneals, and during TEM observation. These observations suggest the operation of a hillock formation mechanism not explained by any existing hillock formation theories.

(111)p microtwinning in SrRuO3 thin films on (001)p LaAlO3

2009 ◽  
Vol 65 (6) ◽  
pp. 694-698 ◽  
Author(s):  
Y. Han ◽  
I. M. Reaney ◽  
D. S. Tinberg ◽  
S. Trolier-McKinstry
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Orientation Relationship ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Zone Axis ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Diffraction Patterns

SrRuO3 (SRO) thin films grown on (001)p (p = pseudocubic) oriented LaAlO3 (LAO) by pulsed laser deposition have been characterized using transmission electron microscopy. Observations along the 〈100〉p directions suggests that although the SRO layer maintains a pseudocube-to-pseudocube orientation relationship with the underlying LAO substrate, it has a ferroelastic domain structure associated with a transformation on cooling to room temperature to an orthorhombic Pbnm phase (a − a − c + Glazer tilt system). In addition, extra diffraction spots located at ±1/6(ooo)p and ±1/3(ooo)p (where `o' indicates an index with an odd number) positions were obtained in 〈110〉p zone-axis diffraction patterns. These were attributed to the existence of high-density twins on {111}p pseudocubic planes within the SrRuO3 films rather than to more conventional mechanisms for the generation of superstructure reflections.

scholarly journals Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga

2010 ◽  
Vol 638-642 ◽  
pp. 2938-2943 ◽  
Author(s):  
A.V. Mogilatenko ◽  
Frank Allenstein ◽  
M.A. Schubert ◽  
Meiken Falke ◽  
G. Beddies ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Nickel Silicide ◽  
Subsequent Annealing ◽  
Formation Temperature ◽  
Transmission Electron

Thin Ni/Al and Ni/Ga layers of different atomic ratios were codeposited onto Si(001) at room temperature followed by subsequent annealing. Influence of annealing temperature on morphology and composition of ternary disilicide NiSi2-xAlx and NiSi2-xGax layers was investigated by transmission electron microscopy. Addition of Al or Ga leads to a decrease of the disilicide formation temperature from 700°C down to at least 500°C. Depending on the composition closed, uniformly oriented NiSi2-xAlx and NiSi2-xGax layers were observed after annealing at 900°C, whereas reaction of a pure Ni film with Si leads to the island formation with a mixture of A- and B-type orientations.

Understanding the graphitization and growth of free-standing nanocrystalline graphene using in situ transmission electron microscopy

Nanoscale ◽  
2017 ◽  
Vol 9 (35) ◽  
pp. 12835-12842 ◽  
Author(s):  
C. N. Shyam Kumar ◽  
Venkata Sai Kiran Chakravadhanula ◽  
Adnan Riaz ◽  
Simone Dehm ◽  
Di Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Domain Growth ◽  
Free Standing ◽  
Tem Analysis ◽  
Thermally Induced ◽  
Transmission Electron

In situ TEM analysis of the thermally induced graphitization and domain growth of free-standing nanocrystalline graphene thin films.

Characterization of Ultrathin Cosi2 on Si(111) Layers.

1987 ◽  
Vol 91 ◽  
Author(s):  
J.L. Batstone ◽  
Julia M. Phillips ◽  
J.M. Gibson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Room Temperature ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
High Temperature Anneal ◽  
Temperature Deposition ◽  
Regular Network ◽  
Pseudomorphic Growth

ABSTRACTUltrathin epitaxial CoSi2 films on Si(111) have been grown in ultrahigh vacuum by room temperature deposition of Co on Si(111) followed by a high temperature anneal at ~600°C. Characterization of the thin films with transmission electron microscopy has revealed pseudomorphic growth up to thicknesses ~30Å. Pinholes present in the pseudomorphic thin films are thought to prevent the trapping of dislocations within the film. A clear transition to films containing a regular network of misfit dislocations occurs at ~40Å. Evidence for the growth of CoSi2 via intermediate metal-rich silicide phases is observed.

scholarly journals Transmission electron microscopy investigation of interfacial reactions between SrFeO3 thin films and silicon substrates

2007 ◽  
Vol 22 (1) ◽  
pp. 76-88
Author(s):  
Dashan Wang ◽  
James J. Tunney ◽  
Xiaomei Du ◽  
Michael L. Post ◽  
Raynald Gauvin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Interfacial Reactions ◽  
Silicon Substrates ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Microscopy Characterization ◽  
Silicon Diffusion

The SrFeO3/SiO2/Si thin film system has been studied using transmission electron microscopy (TEM). The thin films of SrFeO3 were grown by pulsed laser deposition onto silicon substrates with a SiO2 buffer layer at room temperature (RT) and 700 °C and subjected to annealing for various periods of time at temperature T = 700 °C. Transmission electron microscopy characterization showed that the microstructure of the film deposited at room temperature contained crystalline and amorphous layers. Silicon diffusion into SrFeO3 films occurred at the SiO2 interface for the samples deposited at 700 °C and for those films annealed at 700 °C. The silicon diffusion-induced interfacial reactions resulted in the phase transformations and the growth of complex crystalline and amorphous phases. The principal compositions of these phases were Sr(Fe,Si)12O19, SrOx and amorphous [Sr-Fe-O-Si].

Deciphering the three-dimensional morphology of free-standing block copolymer thin films by transmission electron microscopy

Micron ◽  
2013 ◽  
Vol 44 ◽  
pp. 442-450 ◽  
Author(s):  
Frances I. Allen ◽  
Peter Ercius ◽  
Miguel A. Modestino ◽  
Rachel A. Segalman ◽  
Nitash P. Balsara ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Block Copolymer ◽  
Three Dimensional ◽  
Free Standing ◽  
Transmission Electron

scholarly journals Synthesis and Properties of Epitaxial Thin Films of c-axis Oriented Metastable Four-Layered Hexagonal BaRuO3

1999 ◽  
Vol 602 ◽  
Author(s):  
M. K. Lee ◽  
C. B. Eom ◽  
W. Tian ◽  
X. Q. Pan ◽  
M. C. Smoak ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Room Temperature ◽  
Layered Compounds ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Novel Device ◽  
Transmission Electron ◽  
Device Applications

AbstractWe have grown epitaxial thin films of metastable four-layered hexagonal (4H) BaRuO3 on (111) SrTiO3 by 90° off-axis sputtering techniques. X-ray diffraction and transmission electron microscopy experiments reveal that the films are single crystals of c-axis 4H structures with an inplane epitaxial arrangement of BaRuO3 [2110] // SrTiO3 [110]. Smooth multilayer growth has been observed in these films with a step height equaling the size of half unit cell. In-plane resistivity of the films is metallic, with a room temperature value of about 810µΩ-cm and slightly curved temperature dependence. Their magnetic susceptibility is paramagnetic. The metastable layered compounds can be very useful for understanding new solid-state phenomena and novel device applications.

Scanning and Transmission Electron Microscopy of Human Red Blood Cells

1969 ◽  
Vol 27 ◽  
pp. 44-45
Author(s):  
A.J. Tousimis ◽  
T.R. Padden
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Blood Cells ◽  
Room Temperature ◽  
Type Specimen ◽  
New Combination ◽  
Human Red Blood Cells ◽  
Transmission Electron ◽  
Microscope Slides ◽  
Scanning Electron

The size, shape and surface morphology of human erythrocytes (RBC) were examined by scanning electron microscopy (SEM), of the fixed material directly and by transmission electron microscopy (TEM) of surface replicas to compare the relative merits of these two observational procedures for this type specimen.A sample of human blood was fixed in glutaraldehyde and washed in distilled water by centrifugation. The washed RBC's were spread on freshly cleaved mica and on aluminum coated microscope slides and then air dried at room temperature. The SEM specimens were rotary coated with 150Å of 60:40- gold:palladium alloy in a vacuum evaporator using a new combination spinning and tilting device. The TEM specimens were preshadowed with platinum and then rotary coated with carbon in the same device. After stripping the RBC-Pt-C composite film, the RBC's were dissolved in 2.5N HNO3 followed by 0.2N NaOH leaving the preshadowed surface replicas showing positive topography.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

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