scholarly journals Spontaneous domain nucleation under in-plane fields in ultrathin films with Dzyaloshinskii-Moriya interaction

2015 ◽  
Vol 117 (17) ◽  
pp. 17C744 ◽  
Author(s):  
Parnika Agrawal ◽  
Uwe Bauer ◽  
Geoffrey S. D. Beach
Keyword(s):  
Ultrathin Films ◽  
Moriya Interaction

scholarly journals Temperature dependence of the Dzyaloshinskii-Moriya interaction in ultrathin films

2020 ◽  
Vol 101 (5) ◽  
Author(s):  
Yifan Zhou ◽  
Rhodri Mansell ◽  
Sergio Valencia ◽  
Florian Kronast ◽  
Sebastiaan van Dijken
Keyword(s):  
Temperature Dependence ◽  
Ultrathin Films ◽  
Moriya Interaction

scholarly journals Probing the Dzyaloshinskii-Moriya interaction in CoFeB ultrathin films using domain wall creep and Brillouin light spectroscopy

2016 ◽  
Vol 94 (10) ◽  
Author(s):  
R. Soucaille ◽  
M. Belmeguenai ◽  
J. Torrejon ◽  
J.-V. Kim ◽  
T. Devolder ◽  
...  
Keyword(s):  
Domain Wall ◽  
Ultrathin Films ◽  
Moriya Interaction

scholarly journals Domain-wall profiles in Co/Irn /Pt(111) ultrathin films: Influence of the Dzyaloshinskii-Moriya interaction

2016 ◽  
Vol 94 (21) ◽  
Author(s):  
Gy. J. Vida ◽  
E. Simon ◽  
L. Rózsa ◽  
K. Palotás ◽  
L. Szunyogh
Keyword(s):  
Domain Wall ◽  
Ultrathin Films ◽  
Moriya Interaction

scholarly journals Mapping magnetization states in ultrathin films with Dzyaloshinskii–Moriya interaction

2019 ◽  
Vol 21 (9) ◽  
pp. 093022 ◽  
Author(s):  
J Kisielewski ◽  
M Kisielewski ◽  
V Zablotskii ◽  
A Dejneka ◽  
A Maziewski
Keyword(s):  
Ultrathin Films ◽  
Moriya Interaction

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

scholarly journals Scanning Thermal Microscopy of Ultrathin Films: Numerical Studies Regarding Cantilever Displacement, Thermal Contact Areas, Heat Fluxes, and Heat Distribution

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 491
Author(s):  
Christoph Metzke ◽  
Fabian Kühnel ◽  
Jonas Weber ◽  
Günther Benstetter
Keyword(s):  
Thermal Properties ◽  
Ultrathin Films ◽  
Hexagonal Boron Nitride ◽  
Thermal Contact ◽  
Heat Transfer Process ◽  
Heat Propagation ◽  
Heat Fluxes ◽  
Detailed Knowledge ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy

New micro- and nanoscale devices require electrically isolating materials with specific thermal properties. One option to characterize these thermal properties is the atomic force microscopy (AFM)-based scanning thermal microscopy (SThM) technique. It enables qualitative mapping of local thermal conductivities of ultrathin films. To fully understand and correctly interpret the results of practical SThM measurements, it is essential to have detailed knowledge about the heat transfer process between the probe and the sample. However, little can be found in the literature so far. Therefore, this work focuses on theoretical SThM studies of ultrathin films with anisotropic thermal properties such as hexagonal boron nitride (h-BN) and compares the results with a bulk silicon (Si) sample. Energy fluxes from the probe to the sample between 0.6 µW and 126.8 µW are found for different cases with a tip radius of approximately 300 nm. A present thermal interface resistance (TIR) between bulk Si and ultrathin h-BN on top can fully suppress a further heat penetration. The time until heat propagation within the sample is stationary is found to be below 1 µs, which may justify higher tip velocities in practical SThM investigations of up to 20 µms−1. It is also demonstrated that there is almost no influence of convection and radiation, whereas a possible TIR between probe and sample must be considered.

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