The Study of the Optoelectronic Properties of a-SiGe:H Photodiodes

1991 ◽  
Vol 219 ◽  
Author(s):  
L. C. Kuo ◽  
C. C. Lee ◽  
K. H. Chen ◽  
Y. K. Fang ◽  
C. H. Yu
Keyword(s):  
Schottky Barrier ◽  
Layer Thickness ◽  
Quantum Efficiency ◽  
Reverse Bias ◽  
Low Cost ◽  
Schottky Barrier Diode ◽  
Band Gaps ◽  
Pin Diode ◽  
Schottky Barrier Diodes ◽  
Infrared Photodetector

ABSTRACTWe have studied the spectrum of various types of a-SiGe:H alloys for pin and Schottky barrier photodlodes, in which the band gaps of the a-SiGe:H vary between 1.75 eV and 1.35 eV. It has been found that the spectral re-ponse of the Schottky barrier diode shifts significantly to longer wavelength and the quantum efficiency decreases with an increase in i layer thickness. However, for the pin diode, an increase in the i layer thickness can hardly shift the spectrum to longer wavelength. For both pin and Schottky barrier diodes, the quantum efficiency can be increased by increasing the reverse bias. Therefore, an enhanced spectrum with a maximum at 800nm and a tail to lun can be achieved for a reverse-biased a-SiGe:H Schottky barrier diode. The results indicate that a-SiGe:H has a great potential for a low cost infrared photodetector.

Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes

2021 ◽  
Vol 21 (3) ◽  
pp. 2001-2004
Author(s):  
Seong-Ji Min ◽  
Michael A. Schweitz ◽  
Ngoc Thi Nguyen ◽  
Sang-Mo Koo
Keyword(s):  
Schottky Barrier ◽  
Thermal Sensitivity ◽  
Schottky Diodes ◽  
Schottky Barrier Diode ◽  
Pin Diode ◽  
Schottky Barrier Diodes ◽  
Saturation Current ◽  
Pin Diodes ◽  
Temperature Range ◽  
Forward Current

We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

Synthesis, characterization, self-assembly and non-ohmic Schottky barrier diode behaviors of two iron(iii) based semiconductors with theoretical insight

CrystEngComm ◽  
2020 ◽  
Vol 22 (31) ◽  
pp. 5170-5181 ◽  
Author(s):  
Tanmoy Basak ◽  
Dhananjoy Das ◽  
Partha Pratim Ray ◽  
Snehasis Banerjee ◽  
Shouvik Chattopadhyay
Keyword(s):  
Schiff Base ◽  
Schottky Barrier ◽  
Self Assembly ◽  
Schottky Barrier Diode ◽  
Band Gaps ◽  
Schiff Base Complexes ◽  
Schottky Barrier Diodes ◽  
Theoretical Insight

Schottky barrier diodes have been fabricated using two iron(iii) Schiff base complexes. The total and partial DOS values have been calculated using DFT to calculate the band gaps in these complexes.

scholarly journals Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 575 ◽  
Author(s):  
Yue Sun ◽  
Xuanwu Kang ◽  
Yingkui Zheng ◽  
Jiang Lu ◽  
Xiaoli Tian ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Schottky Barrier ◽  
High Power ◽  
High Frequency ◽  
Recent Progress ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 971-974
Author(s):  
Ho Keun Song ◽  
Jong Ho Lee ◽  
Myeong Sook Oh ◽  
Jeong Hyun Moon ◽  
Han Seok Seo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
High Quality ◽  
Ohmic Behavior ◽  
Leakage Path ◽  
Crystallographic Characteristics

Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane (BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had different crystallographic characteristics were used for the comparison of the crystallinity effect on the electrical properties of the SBDs. From the measurement of the reverse I-V characteristics of the SBDs with micropipes, it is shown that the origin of the main leakage path and early breakdown (or ohmic behavior in reverse bias) in 4H-SiC SBDs is the grain boundaries caused by the inclusions or other defects. The best performance of SBD were shown in the epilayer grown at 1440 oC using high quality substrate, and the breakdown voltage and reverse leakage current were about 450 V and 10-9 A/cm2, respectively.

Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress

2019 ◽  
Vol 130 ◽  
pp. 233-240
Author(s):  
Sheng Li ◽  
Chi Zhang ◽  
Siyang Liu ◽  
Jiaxing Wei ◽  
Long Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
Bias Stress
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