Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation
2021 ◽
Vol 36
(5)
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pp. 649-655
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2015 ◽
Vol 23
(5)
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pp. 187-195
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2015 ◽
Vol 135
(6)
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pp. 192-198
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