Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

Piero Migliorato; Md Delwar Hossain Chowdhury; Jae Gwang Um; Manju Seok; Jin Jang

doi:10.1063/1.4752238

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

Applied Physics Letters ◽

10.1063/1.4752238 ◽

2012 ◽

Vol 101 (12) ◽

pp. 123502 ◽

Cited By ~ 84

Author(s):

Piero Migliorato ◽

Md Delwar Hossain Chowdhury ◽

Jae Gwang Um ◽

Manju Seok ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Negative Bias ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium

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Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

Applied Physics Letters ◽

10.1063/1.4813747 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033501 ◽

Cited By ~ 52

Author(s):

Jae Gwang Um ◽

Mallory Mativenga ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Negative Bias ◽

Indium Gallium Zinc Oxide ◽

Positive Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium

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Influence of ambient humidity on the stability of negative bias illumination for amorphous indium gallium zinc oxide thin film transistors

Chinese Journal of Liquid Crystals and Displays ◽

10.37188/cjlcd.2020-0305 ◽

2021 ◽

Vol 36 (5) ◽

pp. 649-655

Author(s):

Guo-feng FENG ◽

◽

Wen ZHANG ◽

Cheng-yuan DONG

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Negative Bias ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Ambient Humidity ◽

Indium Gallium ◽

The Stability

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Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

Applied Physics Letters ◽

10.1063/1.4902867 ◽

2014 ◽

Vol 105 (21) ◽

pp. 213505 ◽

Cited By ~ 17

Author(s):

Kwang-Won Jo ◽

Won-Ju Cho

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Microwave Irradiation ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium

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Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

Journal of Applied Physics ◽

10.1063/1.4922714 ◽

2015 ◽

Vol 117 (23) ◽

pp. 234502 ◽

Cited By ~ 8

Author(s):

Jae Gwang Um ◽

Mallory Mativenga ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Channel Length ◽

Oxide Thin Film ◽

Negative Bias ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Length Dependence ◽

Indium Gallium

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Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors

Applied Physics Letters ◽

10.1063/1.4801762 ◽

2013 ◽

Vol 102 (14) ◽

pp. 143506 ◽

Cited By ~ 43

Author(s):

Md Delwar Hossain Chowdhury ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Temperature Dependence ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Negative Bias ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO2bilayer passivation under gate bias stress

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.02bc17 ◽

2016 ◽

Vol 55 (2S) ◽

pp. 02BC17 ◽

Cited By ~ 4

Author(s):

Ching-Lin Fan ◽

Fan-Ping Tseng ◽

Bo-Jyun Li ◽

Yu-Zuo Lin ◽

Shea-Jue Wang ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium ◽

Gate Bias Stress

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Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors

Journal of Applied Physics ◽

10.1063/1.3662869 ◽

2011 ◽

Vol 110 (11) ◽

pp. 114503 ◽

Cited By ~ 37

Author(s):

Md Delwar Hossain Chowdhury ◽

Sang Hyun Ryu ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Annealing Time ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium

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Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

Journal of Applied Physics ◽

10.1063/1.4870458 ◽

2014 ◽

Vol 115 (13) ◽

pp. 134502 ◽

Cited By ~ 14

Author(s):

Jae Gwang Um ◽

Mallory Mativenga ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Elevated Temperature ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Positive Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium

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Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

Applied Physics Letters ◽

10.1063/1.4948765 ◽

2016 ◽

Vol 108 (18) ◽

pp. 182104 ◽

Cited By ~ 12

Author(s):

Eungtaek Kim ◽

Choong-Ki Kim ◽

Myung Keun Lee ◽

Tewook Bang ◽

Yang-Kyu Choi ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Gate Insulator ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Positive Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium

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Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Chinese Physics B ◽

10.1088/1674-1056/24/7/077307 ◽

2015 ◽

Vol 24 (7) ◽

pp. 077307 ◽

Cited By ~ 2

Author(s):

Hui-Min Qian ◽

Guang Yu ◽

Hai Lu ◽

Chen-Fei Wu ◽

Lan-Feng Tang ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Temperature Dependent ◽

Bias Stress ◽

Electrical Instability ◽

Indium Gallium

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