Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time
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2021 ◽
Vol 36
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pp. 649-655
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2015 ◽
Vol 23
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pp. 187-195
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2018 ◽
Vol 120
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pp. 60-66
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Vol 135
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pp. 192-198
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