scholarly journals Long-pulse production of high current negative ion beam by using actively temperature controlled plasma grid for JT-60SA negative ion source

2015 ◽  
Author(s):  
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Negative Ion ◽  
High Current ◽  
Temperature Controlled ◽  
Long Pulse ◽  
Pulse Production

Long pulse production of high current D[sup −] ion beams in the JT-60 negative ion source

2008 ◽  
Vol 79 (2) ◽  
pp. 02A519 ◽  
Author(s):  
M. Hanada ◽  
M. Kamada ◽  
N. Akino ◽  
N. Ebisawa ◽  
A. Honda ◽  
...  
Keyword(s):  
Ion Beams ◽  
Ion Source ◽  
Negative Ion ◽  
High Current ◽  
Long Pulse ◽  
Pulse Production

Long-pulse operation of a cesium-seeded high-current large negative ion source

1997 ◽  
Vol 68 (5) ◽  
pp. 2012-2019 ◽  
Author(s):  
Y. Takeiri ◽  
M. Osakabe ◽  
Y. Oka ◽  
K. Tsumori ◽  
O. Kaneko ◽  
...  
Keyword(s):  
Ion Source ◽  
Negative Ion ◽  
High Current ◽  
Pulse Operation ◽  
Long Pulse

High‐energy and high‐current hydrogen negative‐ion beam production with an external‐filter‐type large negative‐ion source

1996 ◽  
Vol 67 (3) ◽  
pp. 1021-1023 ◽  
Author(s):  
Y. Takeiri ◽  
O. Kaneko ◽  
Y. Oka ◽  
K. Tsumori ◽  
E. Asano ◽  
...  
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Source ◽  
Negative Ion ◽  
High Current ◽  
Beam Production ◽  
Filter Type

Characteristics of extracted ion beam from a cesium-free negative ion source using sheet plasma

2020 ◽  
Vol 91 (11) ◽  
pp. 113302
Author(s):  
H. Kaminaga ◽  
T. Takimoto ◽  
A. Tonegawa ◽  
K. N. Sato
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Negative Ion ◽  
Sheet Plasma

Progress in long-pulse production of powerful negative ion beams for JT-60SA and ITER

2015 ◽  
Vol 55 (6) ◽  
pp. 063006 ◽  
Author(s):  
A. Kojima ◽  
N. Umeda ◽  
M. Hanada ◽  
M. Yoshida ◽  
M. Kashiwagi ◽  
...  
Keyword(s):  
Ion Beams ◽  
Negative Ion ◽  
Long Pulse ◽  
Pulse Production

Pattern Evolution of NiSi2 on Si Surface upon High Current Pulsed Ni Ion Implantation

2000 ◽  
Vol 648 ◽  
Author(s):  
X.Q. Cheng ◽  
H.N. Zhu ◽  
B.X. Liu
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Fractal Dimensions ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current ◽  
Si Substrate ◽  
Kinetics Of ◽  
Si Wafer

AbstractFractal pattern evolution of NiSi2 grains on a Si surface was induced by high current pulsed Ni ion implantation into Si wafer using metal vapor vacuum arc ion source. The fractal dimension of the patterns was found to correlate with the temperature rise of the Si substrate caused by the implanting Ni ion beam. With increasing of the substrate temperature, the fractal dimensions were determined to increase from less than 1.64, to beyond the percolation threshold of 1.88, and eventually up to 2.0, corresponding to a uniform layer with fine NiSi2 grains. The growth kinetics of the observed surface fractals was also discussed in terms of a special launching mechanism of the pulsed Ni ion beam into the Si substrate.

Extraction of high current Cr ion beam from a multicusp metal ion source

1994 ◽  
Vol 65 (4) ◽  
pp. 1269-1271
Author(s):  
Takatoshi Yamashita ◽  
Yutaka Inouchi ◽  
Shuichi Fujiwara ◽  
Yasuhiro Matsuda ◽  
Hiroshi Inami ◽  
...  
Keyword(s):  
Metal Ion ◽  
Ion Beam ◽  
Ion Source ◽  
High Current
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