scholarly journals Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

2015 ◽  
Vol 117 (6) ◽  
pp. 064504 ◽  
Author(s):  
J. L. M. Oosthoek ◽  
F. C. Voogt ◽  
K. Attenborough ◽  
M. A. Verheijen ◽  
G. A. M. Hurkx ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electrical Properties ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Transmission Electron

Evidence of Ti-related Inclusions in an Al Alloy Interconnecting Layer for Nanometer 256MBit DRAM Semiconductor Devices Characterized by TEM, STEM, EELS Elemental Mapping, and XEDS Linescan

2002 ◽  
Vol 737 ◽  
Author(s):  
Wei Zhao ◽  
Steve Graca
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Semiconductor Devices ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Elemental Mapping ◽  
Access Memory ◽  
Analytical Tem ◽  
Transmission Electron

ABSTRACTWith the introduction of high aspect ratio and steep geometries in deep-subquarter-micron dynamic random access memory (DRAM) device, it becomes more and more critical to understand the formation of undesired intermetallic Ti-Al phases in Al-metallization and thus better-control the profile of interconnectors. In this article, Ti-related inclusions in Metal 1 (M1) interconnecting layer (an AlCu-0.5% alloy) originated from the bottom Ti liner were characterized with an Analytical TEM. Samples were cleaved from nanometer 256Mbit dynamic random access memory DRAM devices. The TEM employed is a JEOL 2010F with a field emission gun (FEG) and running at 200KV acceleration voltage. Correlations among transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), electron energy loss spectroscopy (EELS) elemental mapping, and x-ray energy dispersive spectroscopy (XEDS) elemental linescan were established. The results here not only provide important feedbacks to semiconductor product integration and optimization, but also demonstrate the full-functionality of the start-of-the-art analytical TEM in investigations of nanometer semiconductor devices.

Analysis of FSRAM Single Bit Failures Due to Unique Dislocations

1998 ◽  
Author(s):  
Phil Schani ◽  
S. Subramanian ◽  
Vince Soorholtz ◽  
Pat Liston ◽  
Jamey Moss ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Temperature Sensitive ◽  
Wafer Level ◽  
Top Down ◽  
Access Memory ◽  
Transmission Electron ◽  
Contact Processing

Abstract Temperature sensitive single bit failures at wafer level testing on 0.4µm Fast Static Random Access Memory (FSRAM) devices are analyzed. Top down deprocessing and planar Transmission Electron Microscopy (TEM) analyses show a unique dislocation in the substrate to be the cause of these failures. The dislocation always occurs at the exact same location within the bitcell layout with respect to the single bit failing data state. The dislocation is believed to be associated with buried contact processing used in this type of bitcell layout.

Improved thermal and electrical properties of Al-doped Ge2Sb2Te5films for phase-change random access memory

2012 ◽  
Vol 45 (37) ◽  
pp. 375302 ◽  
Author(s):  
Guoxiang Wang ◽  
Xiang Shen ◽  
Qiuhua Nie ◽  
Rongping Wang ◽  
Liangcai Wu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Thermal And Electrical Properties

Improvement of Electrical Properties of the Ge 2 Sb 2 Te 5 Film by Doping Si for Phase-Change Random Access Memory

2006 ◽  
Vol 23 (1) ◽  
pp. 172-174 ◽  
Author(s):  
Qiao Bao-Wei ◽  
Feng Jie ◽  
Lai Yun-Feng ◽  
Ling Yun ◽  
Lin Yin-Yin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

Electrical Properties of Ag-Doped Ge 2 Sb 2 Te 5 Films Used for Phase Change Random Access Memory

2005 ◽  
Vol 22 (4) ◽  
pp. 934-937 ◽  
Author(s):  
Xia Ji-Lin ◽  
Liu Bo ◽  
Song Zhi-Tang ◽  
Feng Song-Lin ◽  
Chen Bomy
Keyword(s):  
Electrical Properties ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

Reversible switching in bicontinuous structure for phase change random access memory application

Nanoscale ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 4678-4684
Author(s):  
Yan Cheng ◽  
Yonghui Zheng ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Bicontinuous Structure ◽  
Amorphous Si

A 3D nano-bicontinuous structure consisting of a reversible Sb2Te3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb2Te3 nano areas switch between the a- and f-structure.

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