Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

2006 ◽  
Vol 252 (24) ◽  
pp. 8404-8409 ◽  
Author(s):  
Baowei Qiao ◽  
Jie Feng ◽  
Yunfeng Lai ◽  
Yun Ling ◽  
Yinyin Lin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Si Doping ◽  
Structural And Electrical Properties

Improved thermal and electrical properties of Al-doped Ge2Sb2Te5films for phase-change random access memory

2012 ◽  
Vol 45 (37) ◽  
pp. 375302 ◽  
Author(s):  
Guoxiang Wang ◽  
Xiang Shen ◽  
Qiuhua Nie ◽  
Rongping Wang ◽  
Liangcai Wu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Thermal And Electrical Properties

Improvement of Electrical Properties of the Ge 2 Sb 2 Te 5 Film by Doping Si for Phase-Change Random Access Memory

2006 ◽  
Vol 23 (1) ◽  
pp. 172-174 ◽  
Author(s):  
Qiao Bao-Wei ◽  
Feng Jie ◽  
Lai Yun-Feng ◽  
Ling Yun ◽  
Lin Yin-Yin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

Electrical Properties of Ag-Doped Ge 2 Sb 2 Te 5 Films Used for Phase Change Random Access Memory

2005 ◽  
Vol 22 (4) ◽  
pp. 934-937 ◽  
Author(s):  
Xia Ji-Lin ◽  
Liu Bo ◽  
Song Zhi-Tang ◽  
Feng Song-Lin ◽  
Chen Bomy
Keyword(s):  
Electrical Properties ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

Reversible switching in bicontinuous structure for phase change random access memory application

Nanoscale ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 4678-4684
Author(s):  
Yan Cheng ◽  
Yonghui Zheng ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Bicontinuous Structure ◽  
Amorphous Si

A 3D nano-bicontinuous structure consisting of a reversible Sb2Te3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb2Te3 nano areas switch between the a- and f-structure.

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Temperature Dependence of Phase-Change Random Access Memory Cell

2006 ◽  
Vol 45 (5A) ◽  
pp. 3955-3958 ◽  
Author(s):  
X. S. Miao ◽  
L. P. Shi ◽  
H. K. Lee ◽  
J. M. Li ◽  
R. Zhao ◽  
...  
Keyword(s):  
Phase Change ◽  
Temperature Dependence ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Access Memory

scholarly journals Thermal characterization and analysis of phase change random access memory

2005 ◽  
Vol 98 (1) ◽  
pp. 013520 ◽  
Author(s):  
V. Giraud ◽  
J. Cluzel ◽  
V. Sousa ◽  
A. Jacquot ◽  
A. Dauscher ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Thermal Characterization ◽  
Access Memory
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