Evidence of ion intercalation mediated band structure modification and opto-ionic coupling in lithium niobite

2015 ◽  
Vol 117 (3) ◽  
pp. 035704 ◽  
Author(s):  
Joshua C. Shank ◽  
M. Brooks Tellekamp ◽  
W. Alan Doolittle
Keyword(s):  
Band Structure ◽  
Structure Modification ◽  
Ion Intercalation ◽  
Ionic Coupling

scholarly journals Experimental investigation of the predicted band structure modification of Mg2X (X: Si, Sn) thermoelectric materials due to scandium addition

2019 ◽  
Vol 125 (22) ◽  
pp. 225103 ◽  
Author(s):  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hasbuna Kamila ◽  
Eckhard Mueller ◽  
Johannes de Boor
Keyword(s):  
Experimental Investigation ◽  
Band Structure ◽  
Thermoelectric Materials ◽  
Structure Modification

Evidence of band structure modification due to Jahn–Teller distortion in LixMn2O4by photoacoustic spectroscopy

2007 ◽  
Vol 40 (12) ◽  
pp. 3807-3810 ◽  
Author(s):  
S Thomas Lee ◽  
K Raveendranath ◽  
Rajive M Tomy ◽  
Nibu A George ◽  
S Jayalekshmi ◽  
...  
Keyword(s):  
Band Structure ◽  
Photoacoustic Spectroscopy ◽  
Structure Modification ◽  
Teller Distortion ◽  
Jahn Teller ◽  
Jahn Teller Distortion

The realization of a high thermoelectric figure of merit in Ge-substituted β-Zn4Sb3 through band structure modification

2012 ◽  
Vol 22 (28) ◽  
pp. 13977 ◽  
Author(s):  
Shanyu Wang ◽  
Xiaojian Tan ◽  
Gangjian Tan ◽  
Xiaoyu She ◽  
Wei Liu ◽  
...  
Keyword(s):  
Band Structure ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Structure Modification ◽  
Thermoelectric Figure

Evidence of band structure modification of LiMn2O4 upon lithium deintercalation by photoacoustic spectroscopy

2007 ◽  
Vol 90 (16) ◽  
pp. 161912 ◽  
Author(s):  
S. Thomas Lee ◽  
K. Raveendranath ◽  
M. Rajive Tomy ◽  
M. Paulraj ◽  
S. Jayalekshmi ◽  
...  
Keyword(s):  
Band Structure ◽  
Photoacoustic Spectroscopy ◽  
Structure Modification

Band structure modification of the thermoelectric Heusler-phase TiFe2Sn via Mn substitution

2017 ◽  
Vol 19 (28) ◽  
pp. 18273-18278 ◽  
Author(s):  
Tianhua Zou ◽  
Tiantian Jia ◽  
Wenjie Xie ◽  
Yongsheng Zhang ◽  
Marc Widenmeyer ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Seebeck Coefficient ◽  
Fermi Level ◽  
Density Of States ◽  
Effective Strategy ◽  
Structure Modification ◽  
Electronic Density ◽  
Heusler Phase ◽  
Mn Substitution

Doping (or substitution)-induced modification of the electronic structure to increase the electronic density of states (eDOS) near the Fermi level is considered as an effective strategy to enhance the Seebeck coefficient, and may consequently boost the thermoelectric performance.

Band Structure Modification and Mass Fluctuation Effects of Isoelectronic Germanium-Doping on Thermoelectric Properties of ZrNiSn

2019 ◽  
Vol 3 (2) ◽  
pp. 1349-1357 ◽  
Author(s):  
Kishor Kumar Johari ◽  
Ruchi Bhardwaj ◽  
Nagendra S. Chauhan ◽  
Bhasker Gahtori ◽  
Sivaiah Bathula ◽  
...  
Keyword(s):  
Band Structure ◽  
Thermoelectric Properties ◽  
Structure Modification ◽  
Fluctuation Effects ◽  
Mass Fluctuation

Two-dimensional CdS intercalated ZnO nanorods: a concise study on interfacial band structure modification

RSC Advances ◽  
2016 ◽  
Vol 6 (57) ◽  
pp. 52395-52402 ◽  
Author(s):  
Hind Fadhil Oleiwi ◽  
Sin Tee Tan ◽  
Hock Beng Lee ◽  
Chi Chin Yap ◽  
Riski Titian Ginting ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Structure ◽  
Band Gap ◽  
Optical Band Gap ◽  
Zno Nanorods ◽  
Cell Performance ◽  
Two Dimensional ◽  
Structure Modification ◽  
Solar Cell Performance

The intercalation of CdS on ZnO nanorods modified the optical band gap effectively and improved the solar cell performance significantly.

Formation of Vacancies and Divacancies in Plane-Stressed Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 433-438 ◽  
Author(s):  
S. Nicolaysen ◽  
Mariya G. Ganchenkova ◽  
Risto M. Nieminen
Keyword(s):  
Band Structure ◽  
Fermi Level ◽  
Plane Stress ◽  
First Principles ◽  
Defect Formation ◽  
Lattice Relaxation ◽  
Structure Modification ◽  
Strain Magnitude ◽  
Formation Energies ◽  
Elastic Lattice

The effect of compressive and tensile plane-stress loading on formation energies and electronic properties of vacancies and divacancies in silicon are studied by first-principles approach for in-plane strains up to 0.7%. It is demonstrated that contributions to defect formation energies from the elastic lattice relaxation and from the band structure modification respond to stress in a different manner, leading to noticeable different behaviour of formation energies for different charges states. The most stable vacancy charge states at different Fermi level are shown to be sensitive to strain magnitude and sign. This results in the strain-induced shifts and even disappearance of some of thermal ionization levels of vacancies and divacancies in the band gap.

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