scholarly journals Experimental investigation of the predicted band structure modification of Mg2X (X: Si, Sn) thermoelectric materials due to scandium addition

2019 ◽  
Vol 125 (22) ◽  
pp. 225103 ◽  
Author(s):  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hasbuna Kamila ◽  
Eckhard Mueller ◽  
Johannes de Boor
2001 ◽  
Vol 64 (11) ◽  
Author(s):  
B. J. Pawlak ◽  
T. Gregorkiewicz ◽  
C. A. J. Ammerlaan ◽  
W. Takkenberg ◽  
F. D. Tichelaar ◽  
...  

Author(s):  
Gautam Sharma ◽  
Vineet Kumar Pandey ◽  
Shouvik Datta ◽  
Prasenjit Ghosh

Thermoelectric materials are used for conversion of waste heat to electrical energy. The transport coefficients that determine their thermoelectric properties depend on the band structure and the relaxation time of...


2020 ◽  
Vol 8 (34) ◽  
pp. 17579-17594 ◽  
Author(s):  
Francesco Ricci ◽  
Alexander Dunn ◽  
Anubhav Jain ◽  
Gian-Marco Rignanese ◽  
Geoffroy Hautier

Gapped metals present in their band structure a gap near the Fermi level. This key feature makes these metals comparable to degenerate semiconductors and thus suitable as thermoelectrics. The present screening searches them systematically.


2016 ◽  
Vol 4 (19) ◽  
pp. 4331-4331 ◽  
Author(s):  
Hong Zhu ◽  
Geoffroy Hautier ◽  
Umut Aydemir ◽  
Zachary M. Gibbs ◽  
Guodong Li ◽  
...  

Correction for ‘Computational and experimental investigation of TmAgTe2 and XYZ2 compounds, a new group of thermoelectric materials identified by first-principles high-throughput screening’ by Hong Zhu et al., J. Mater. Chem. C, 2015, 3, 10554–10565.


2007 ◽  
Vol 40 (12) ◽  
pp. 3807-3810 ◽  
Author(s):  
S Thomas Lee ◽  
K Raveendranath ◽  
Rajive M Tomy ◽  
Nibu A George ◽  
S Jayalekshmi ◽  
...  

2012 ◽  
Vol 22 (28) ◽  
pp. 13977 ◽  
Author(s):  
Shanyu Wang ◽  
Xiaojian Tan ◽  
Gangjian Tan ◽  
Xiaoyu She ◽  
Wei Liu ◽  
...  

2007 ◽  
Vol 90 (16) ◽  
pp. 161912 ◽  
Author(s):  
S. Thomas Lee ◽  
K. Raveendranath ◽  
M. Rajive Tomy ◽  
M. Paulraj ◽  
S. Jayalekshmi ◽  
...  

2017 ◽  
Vol 19 (28) ◽  
pp. 18273-18278 ◽  
Author(s):  
Tianhua Zou ◽  
Tiantian Jia ◽  
Wenjie Xie ◽  
Yongsheng Zhang ◽  
Marc Widenmeyer ◽  
...  

Doping (or substitution)-induced modification of the electronic structure to increase the electronic density of states (eDOS) near the Fermi level is considered as an effective strategy to enhance the Seebeck coefficient, and may consequently boost the thermoelectric performance.


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