Two-dimensional CdS intercalated ZnO nanorods: a concise study on interfacial band structure modification

RSC Advances ◽  
2016 ◽  
Vol 6 (57) ◽  
pp. 52395-52402 ◽  
Author(s):  
Hind Fadhil Oleiwi ◽  
Sin Tee Tan ◽  
Hock Beng Lee ◽  
Chi Chin Yap ◽  
Riski Titian Ginting ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Structure ◽  
Band Gap ◽  
Optical Band Gap ◽  
Zno Nanorods ◽  
Cell Performance ◽  
Two Dimensional ◽  
Structure Modification ◽  
Solar Cell Performance

The intercalation of CdS on ZnO nanorods modified the optical band gap effectively and improved the solar cell performance significantly.

Impact of Nonuniformities on Thin Cu(In,Ga)Se2 Solar Cell Performance

2007 ◽  
Vol 1012 ◽  
Author(s):  
Ana Kanevce ◽  
James R. Sites
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Cell Performance ◽  
Device Performance ◽  
Back Contact ◽  
Two Dimensional ◽  
Solar Cell Performance ◽  
Voltage Loss ◽  
Dimensional Network ◽  
Diode Voltage

AbstractSolar-cell performance degradation due to physical nonuniformities becomes more significant as the thickness of polycrystalline absorbers is reduced. “Voltage” nonuniformities such as those due to band-gap fluctuations, variations in the back-contact proximity, and areas where the absorber is completely depleted can have very significant impact on cell performance. Similarly local shunts can seriously degrade the efficiency. “Current” nonuniformities such as optical defects have generally much less impact. The analysis presented is based on Cu(In,Ga)Se2 cells, but the qualitative results should be applicable to thin-absorber devices in general. For lateral nonuniformity studies, the solar cell is simulated by a two dimensional network of parallel diodes separated by resistors. The nonuniformities are approximated by small regions of reduced photovoltage, often referred to as “weak diodes”, and by isolated shunt resistors. The weak-diode approach allows investigation of device performance as a function of the weak-diode voltage deficit, the ratio of weak-to strong-diode area, and the weak diodes' spatial distribution. Increased TCO resistance can isolate weak diodes, thus limiting the voltage loss due to nonuniformities, but increasing fill-factor losses.

Order-disorder related band gap changes in Cu2ZnSn(S,Se)4: Impact on solar cell performance

2015 ◽  
Author(s):  
Christoph Krammer ◽  
Christian Huber ◽  
Thomas Schnabel ◽  
Christian Zimmermann ◽  
Mario Lang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Cell Performance ◽  
Solar Cell Performance

Numerical study of CdTe solar cells with p-MoTe2 TMDC as an interfacial layer using SCAPS

2018 ◽  
Vol 32 (23) ◽  
pp. 1850269 ◽  
Author(s):  
Mohamed Moustafa ◽  
Tariq Alzoubi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Band Gap ◽  
Carrier Concentration ◽  
Interfacial Layer ◽  
Cell Performance ◽  
Maximum Efficiency ◽  
Back Contact ◽  
Solar Cell Performance ◽  
The Impact

The impact of molybdenum ditelluride (p-type MoTe2) transition metal dichalcogenide (TMDC) material formation as an interfacial layer between CdTe absorber layer and Mo back contact is investigated. The simulation is conducted using the solar cell capacitance simulator (SCAPS) software. Band gap energy, carrier concentration, and layer thickness of the p-MoTe2 have been varied in this study to investigate the possible influences of p-MoTe2 on the electrical properties and the photovoltaic parameters of CdTe thin film solar cells. It has been observed that a thickness of the p-MoTe2 interfacial layer less than 60 nm leads to a decrease in the cell performance. In regard to the effect of the band gap, a maximum efficiency of 16.4% at the optimum energy gap value of 0.95 eV has been obtained at a doping of [Formula: see text]. Additionally, increasing the acceptor carrier concentration [Formula: see text] of MoTe2 enhances the solar cell performance. The solar cell efficiency reaches 15.5% with [Formula: see text] of [Formula: see text] with layer thicknesses above 80 nm. This might be attributed to the possibility of forming a back surface field for the photogenerated electrons, which reduces recombination at the back contact and hence provides a low resistivity contact for holes. The results justify that the MoTe2 interfacial layer mediates an ohmic contact to CdTe films.

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